The temperature dependence of the band GAPSi
With the help of mathematical modeling of the thermal broadening of the energy levels studied the
 temperature dependence of the band gap semiconductors. In view of the temperature dependence of
 the effective mass of the density of states obtained graphs temperature dependence of th...
Saved in:
| Published in: | Физическая инженерия поверхности |
|---|---|
| Date: | 2013 |
| Main Authors: | , , |
| Format: | Article |
| Language: | Russian |
| Published: |
Науковий фізико-технологічний центр МОН та НАН України
2013
|
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/100315 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | The temperature dependence of the band GAPSi / G. Guliamov, U.I. Erkaboev, N.Y. Sharibaev // Физическая инженерия поверхности. — 2013. — Т. 11, № 3. — С. 289–292. — Бібліогр.: 9 назв. — англ. |