Monocrystalline structure formation of doped perfect silicon crystals
In this paper we consider perfect doped silicon single crystals growth. Special features of anodic etching of n- and p-type single crystals has been revealed. An impact of seed orientation on dislocation and defect structure evolution in crystal on different growth stages has been found. Influence o...
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| Published in: | Вопросы атомной науки и техники |
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| Date: | 2016 |
| Main Authors: | , , , |
| Format: | Article |
| Language: | English |
| Published: |
Національний науковий центр «Харківський фізико-технічний інститут» НАН України
2016
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| Subjects: | |
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/111722 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Monocrystalline structure formation of doped perfect silicon crystals / N.А. Azarenkov, V.Е. Semenenko, А.I. Ovcharenko, M.M. Pylypenko // Вопросы атомной науки и техники. — 2016. — № 1. — С. 23-29. — Бібліогр.: 24 назв. — англ. |