Monocrystalline structure formation of doped perfect silicon crystals

• Published in: Вопросы атомной науки и техники
• Date: 2016
• Main Authors: Azarenkov, N.А., Semenenko, V.Е., Ovcharenko, А.I., Pylypenko, M.M.
• Format: Article
• Language: English
• Published: Національний науковий центр «Харківський фізико-технічний інститут» НАН України 2016
• Subjects: Чистые материалы и вакуумные технологии
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/111722
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Monocrystalline structure formation of doped perfect silicon crystals / N.А. Azarenkov, V.Е. Semenenko, А.I. Ovcharenko, M.M. Pylypenko // Вопросы атомной науки и техники. — 2016. — № 1. — С. 23-29. — Бібліогр.: 24 назв. — англ.

In this paper we consider perfect doped silicon single crystals growth. Special features of anodic etching of n- and p-type single crystals has been revealed. An impact of seed orientation on dislocation and defect structure evolution in crystal on different growth stages has been found. Influence o...