Characteristics of interface corrugations in short-period GaAs/AlAs superlattices

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 1998
• Hauptverfasser: Daweritz, L., Grahn, H., Hey, R., Jenichen, B., Ploog, K., Korbutyak, D., Krylyuk, S., Kryuchenko, Yu., Litovchenko, V.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 1998
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/114668
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Characteristics of interface corrugations in short-period GaAs/AlAs superlattices / L. Daweritz, H. Grahn, R. Hey, B. Jenichen, K. Ploog, D. Korbutyak, S. Krylyuk, Yu. Kryuchenko, V. Litovchenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1998. — Т. 1, № 1. — С. 45-49. — Бібліогр.: 12 назв. — англ.

GaAs/AlAs supelattices with corrugated interfaces have been investigated by the polarized photoluminescence method. Using the theoretical approach, which associates the linear polarization of exciton photoluminescence with the corrugation parameters, experimental results have been fitted to determin...