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Characteristics of interface corrugations in short-period GaAs/AlAs superlattices

GaAs/AlAs supelattices with corrugated interfaces have been investigated by the polarized photoluminescence method. Using the theoretical approach, which associates the linear polarization of exciton photoluminescence with the corrugation parameters, experimental results have been fitted to determin...

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Bibliographic Details
Published in:Semiconductor Physics Quantum Electronics & Optoelectronics
Date:1998
Main Authors: Daweritz, L., Grahn, H., Hey, R., Jenichen, B., Ploog, K., Korbutyak, D., Krylyuk, S., Kryuchenko, Yu., Litovchenko, V.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 1998
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/114668
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Characteristics of interface corrugations in short-period GaAs/AlAs superlattices / L. Daweritz, H. Grahn, R. Hey, B. Jenichen, K. Ploog, D. Korbutyak, S. Krylyuk, Yu. Kryuchenko, V. Litovchenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1998. — Т. 1, № 1. — С. 45-49. — Бібліогр.: 12 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine

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