Crystallization kinetics of Ge₂₂Sb₂₂Tе₅₆ doped with Se and Ni
Effects of Ni and Se incorporation on the crystallization kinetics of Ge:Sb:Te alloys have been studied. Both elements were found to increase the stability of the amorphous structure. The kinetics of crystallization under isothermal treatments indicates that Ni reduces both the barrier for thermal c...
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| Datum: | 1998 |
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| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
1998
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/114673 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Crystallization kinetics of Ge₂₂Sb₂₂Tе₅₆ doped with Se and Ni / E. Garsia-Garsia, M. Yanez-Limon, Y. Vorobiev, F. Espinoza-Beltran, J. Gonzalez-Hernandez // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1998. — Т. 1, № 1. — С. 71-74. — Бібліогр.: 8 назв. — англ. |