High-temperature characteristics of zone-melting recrystallized silicon-on-insulator MOSFETs

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 1998
• Hauptverfasser: Lysenko, V.S., Rudenko, T.E., Nazarov, A.N., Kilchitskaya, V.I., Rudenko, A.N., Limanov, A.B., Colinge, J.-P.
• Format: Artikel
• Sprache: English
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 1998
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/114677
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: High-temperature characteristics of zone-melting recrystallized silicon-on-insulator MOSFETs / V.S. Lysenko, T.E. Rudenko, A.N. Nazarov, V.I. Kilchitskaya, A.N. Rudenko, A.B. Limanov, J.-P. Colinge // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1998. — Т. 1, № 1. — С. 101-107. — Бібліогр.: 11 назв. — англ.

The characteristics of enhancement-mode MOS transistors fabricated on zone-melting recrystallized (ZMR) silicon-on-insulator (SOI) films were systematically experimentally investigated in the temperature range 25–300°C. The main temperature-dependent parameters (the threshold voltage, the channel mo...