Doped nanoparticles for optoelectronics applications

• Published in: Физика низких температур
• Date: 2009
• Main Authors: Godlewski, M., Wolska, E., Yatsunenko, S., Opalińska, A., Fidelus, J., Łojkowski, W., Zalewska, M., Kłonkowski, A., Kuritsyn, D.
• Format: Article
• Language: English
• Published: Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України 2009
• Subjects: XVII Уральская международная зимняя школа по физике полупроводников
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/116764
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Doped nanoparticles for optoelectronics applications / M. Godlewski, E. Wolska, S. Yatsunenko // Физика низких температур. — 2009. — Т. 35, № 1. — С. 64-69. — Бібліогр.: 28 назв. — англ.

Nanoparticles of wide band gap materials doped with transition metal ions or rare earth ions are intensively studied for their possible applications in a new generation of light sources for an overhead illumination. In this work we discuss mechanisms of emission enhancement in nanoparticles doped wi...