Doped nanoparticles for optoelectronics applications
Nanoparticles of wide band gap materials doped with transition metal ions or rare earth ions are intensively studied for their possible applications in a new generation of light sources for an overhead illumination. In this work we discuss mechanisms of emission enhancement in nanoparticles doped wi...
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| Опубліковано в: : | Физика низких температур |
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| Дата: | 2009 |
| Автори: | , , , , , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
2009
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| Теми: | |
| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/116764 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Doped nanoparticles for optoelectronics applications / M. Godlewski, E. Wolska, S. Yatsunenko // Физика низких температур. — 2009. — Т. 35, № 1. — С. 64-69. — Бібліогр.: 28 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862605581444972544 |
|---|---|
| author | Godlewski, M. Wolska, E. Yatsunenko, S. Opalińska, A. Fidelus, J. Łojkowski, W. Zalewska, M. Kłonkowski, A. Kuritsyn, D. |
| author_facet | Godlewski, M. Wolska, E. Yatsunenko, S. Opalińska, A. Fidelus, J. Łojkowski, W. Zalewska, M. Kłonkowski, A. Kuritsyn, D. |
| citation_txt | Doped nanoparticles for optoelectronics applications / M. Godlewski, E. Wolska, S. Yatsunenko // Физика низких температур. — 2009. — Т. 35, № 1. — С. 64-69. — Бібліогр.: 28 назв. — англ. |
| collection | DSpace DC |
| container_title | Физика низких температур |
| description | Nanoparticles of wide band gap materials doped with transition metal ions or rare earth ions are intensively studied for their possible applications in a new generation of light sources for an overhead illumination. In this work we discuss mechanisms of emission enhancement in nanoparticles doped with rare earth or/and transition metal ions. Arguments are presented that phosphors of nanosize may emit light more efficiently and thus be applied in practical optoelectronic devices.
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| first_indexed | 2025-11-28T12:03:44Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-116764 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| language | English |
| last_indexed | 2025-11-28T12:03:44Z |
| publishDate | 2009 |
| publisher | Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
| record_format | dspace |
| spelling | Godlewski, M. Wolska, E. Yatsunenko, S. Opalińska, A. Fidelus, J. Łojkowski, W. Zalewska, M. Kłonkowski, A. Kuritsyn, D. 2017-05-15T04:59:42Z 2017-05-15T04:59:42Z 2009 Doped nanoparticles for optoelectronics applications / M. Godlewski, E. Wolska, S. Yatsunenko // Физика низких температур. — 2009. — Т. 35, № 1. — С. 64-69. — Бібліогр.: 28 назв. — англ. PACS: 81.07.Wx, 78.47.–p, 78.55.–m, 78.55.Hx https://nasplib.isofts.kiev.ua/handle/123456789/116764 Nanoparticles of wide band gap materials doped with transition metal ions or rare earth ions are intensively studied for their possible applications in a new generation of light sources for an overhead illumination. In this work we discuss mechanisms of emission enhancement in nanoparticles doped with rare earth or/and transition metal ions. Arguments are presented that phosphors of nanosize may emit light more efficiently and thus be applied in practical optoelectronic devices. This work was partly supported by grant No 1 P03B
 090 30 of MEiN, Poland en Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України Физика низких температур XVII Уральская международная зимняя школа по физике полупроводников Doped nanoparticles for optoelectronics applications Article published earlier |
| spellingShingle | Doped nanoparticles for optoelectronics applications Godlewski, M. Wolska, E. Yatsunenko, S. Opalińska, A. Fidelus, J. Łojkowski, W. Zalewska, M. Kłonkowski, A. Kuritsyn, D. XVII Уральская международная зимняя школа по физике полупроводников |
| title | Doped nanoparticles for optoelectronics applications |
| title_full | Doped nanoparticles for optoelectronics applications |
| title_fullStr | Doped nanoparticles for optoelectronics applications |
| title_full_unstemmed | Doped nanoparticles for optoelectronics applications |
| title_short | Doped nanoparticles for optoelectronics applications |
| title_sort | doped nanoparticles for optoelectronics applications |
| topic | XVII Уральская международная зимняя школа по физике полупроводников |
| topic_facet | XVII Уральская международная зимняя школа по физике полупроводников |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/116764 |
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