On origin of room temperature ferromagnetism in wide gap semiconductors

The emerging field of semiconductor spintronics would be dramatically boosted if a semiconductor exhibiting room-temperature ferromagnetism could be found. Here, we discuss the recent stage of the research, paying particular attention to the understanding of observed room temperature ferromagnetism...

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Datum:2009
Hauptverfasser: Korbecka, Anna, Majewski, Jacek A.
Format: Artikel
Sprache:English
Veröffentlicht: Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України 2009
Schriftenreihe:Физика низких температур
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Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/116765
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:On origin of room temperature ferromagnetism in wide gap semiconductors / Anna Korbecka, Jacek A. Majewski // Физика низких температур. — 2009. — Т. 35, № 1. — С. 70-74. — Бібліогр.: 45 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
Beschreibung
Zusammenfassung:The emerging field of semiconductor spintronics would be dramatically boosted if a semiconductor exhibiting room-temperature ferromagnetism could be found. Here, we discuss the recent stage of the research, paying particular attention to the understanding of observed room temperature ferromagnetism in wide band semiconductors, GaMnN and ZnMnO. Since the spinodal decomposition has been observed in these structures, we consider the possibilities to influence density fluctuations of the alloys to obtain ferromagnetic semiconductors with required functionalities. We contrast these compounds with (In,Mn)As and (Ga,Mn)As, where the ferromagnetism is well understood, albeit well below room temperature.