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InSb фотодіоди (Огляд. Частина I)

Розглянуто сучасний стан розробок InSb фотодіодів методом іонної імплантації. Проаналізовано особливості формування розупорядкованого шару у залежності від маси іона, його енергії та дози опромінення. Зроблено висновки щодо ефективності стаціонарного та імпульсного фотонного відпалів радіаційних деф...

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Bibliographic Details
Published in:	Оптоэлектроника и полупроводниковая техника
Date:	2016
Main Authors:	Сукач, А.В., Тетьоркін, В.В., Матіюк, І.М., Ткачук, А.І.
Format:	Article
Language:	Ukrainian
Published:	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2016
Online Access:	https://nasplib.isofts.kiev.ua/handle/123456789/116782
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Journal Title:	Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:	InSb фотодіоди (Огляд. Частина I) / А.В. Сукач, В.В. Тетьоркін, І.М. Матіюк, А.І. Ткачук // Оптоэлектроника и полупроводниковая техника: Сб. научн. тр. — 2016. — Вип. 51. — С. 43-68. — Бібліогр.: 82 назв. — укр.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine

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