Conductance of a STM contact on the surface of a thin film
The conductance of a contact, having a radius smaller than the Fermi wave length, on the surface of a thin metal film is investigated theoretically. It is shown that quantization of the electron energy spectrum in the film leads to a step-like dependence of differential conductance G(V) as a funct...
Збережено в:
| Дата: | 2012 |
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| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
2012
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| Назва видання: | Физика низких температур |
| Теми: | |
| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/117243 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Conductance of a STM contact on the surface of a thin film / N.V. Khotkevych, Yu.A. Kolesnichenko, J.M. van Ruitenbeek // Физика низких температур. — 2012. — Т. 38, № 6. — С. 644-652. — Бібліогр.: 32 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | The conductance of a contact, having a radius smaller than the Fermi wave length, on the surface of a thin
metal film is investigated theoretically. It is shown that quantization of the electron energy spectrum in the film
leads to a step-like dependence of differential conductance G(V) as a function of applied bias eV. The distance
between neighboring steps in eV equals the energy level spacing due to size quantization. We demonstrate that a
study of G(V) for both signs of the voltage maps the spectrum of energy levels above and below Fermi surface in
scanning tunneling experiments. |
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