Properties of the crystalline silicon strained via cavitation impact
Properties of crystalline silicon under acoustic cavitation have been investigated. The cavitation impact was initiated by focusing a high-frequency (1– 6 MHz) acoustic wave in liquid nitrogen. AFM, optical and scanning electron microscopy methods as well as energy dispersive X-ray spectroscopy were...
Gespeichert in:
| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 2013 |
| 1. Verfasser: | |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2013
|
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/117600 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Properties of the crystalline silicon strained via cavitation impact / R.K. Savkina // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 1. — С. 43-47. — Бібліогр.: 12 назв. — англ. |