Properties of the crystalline silicon strained via cavitation impact
Properties of crystalline silicon under acoustic cavitation have been investigated. The cavitation impact was initiated by focusing a high-frequency (1– 6 MHz) acoustic wave in liquid nitrogen. AFM, optical and scanning electron microscopy methods as well as energy dispersive X-ray spectroscopy were...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2013 |
| Автор: | |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2013
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/117600 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Properties of the crystalline silicon strained via cavitation impact / R.K. Savkina // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 1. — С. 43-47. — Бібліогр.: 12 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862612098147680256 |
|---|---|
| author | Savkina, R.K. |
| author_facet | Savkina, R.K. |
| citation_txt | Properties of the crystalline silicon strained via cavitation impact / R.K. Savkina // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 1. — С. 43-47. — Бібліогр.: 12 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Properties of crystalline silicon under acoustic cavitation have been investigated. The cavitation impact was initiated by focusing a high-frequency (1– 6 MHz) acoustic wave in liquid nitrogen. AFM, optical and scanning electron microscopy methods as well as energy dispersive X-ray spectroscopy were used to analyze morphology and chemical composition of semiconductor surface. Surface structurization and chemical transformations induced at the solid-liquid interface was observed. The XRD investigation pointed to stresses in the semiconductor lattice induced by the cavitation effect. A standard procedure of photoresponse spectroscopy was employed prior to and after sonication and pointed to an essential photosensitivity rise of
the silicon target. The mechanisms involved during Si sonication have been discussed.
|
| first_indexed | 2025-11-29T03:29:34Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-117600 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-29T03:29:34Z |
| publishDate | 2013 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Savkina, R.K. 2017-05-25T15:36:58Z 2017-05-25T15:36:58Z 2013 Properties of the crystalline silicon strained via cavitation impact / R.K. Savkina // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 1. — С. 43-47. — Бібліогр.: 12 назв. — англ. 1560-8034 PACS 43.35.Ei, 81.05.Cy, 81.40.-z https://nasplib.isofts.kiev.ua/handle/123456789/117600 Properties of crystalline silicon under acoustic cavitation have been investigated. The cavitation impact was initiated by focusing a high-frequency (1– 6 MHz) acoustic wave in liquid nitrogen. AFM, optical and scanning electron microscopy methods as well as energy dispersive X-ray spectroscopy were used to analyze morphology and chemical composition of semiconductor surface. Surface structurization and chemical transformations induced at the solid-liquid interface was observed. The XRD investigation pointed to stresses in the semiconductor lattice induced by the cavitation effect. A standard procedure of photoresponse spectroscopy was employed prior to and after sonication and pointed to an essential photosensitivity rise of
 the silicon target. The mechanisms involved during Si sonication have been discussed. The author is grateful to Dr. A. Smirnov and Dr. T. Kryshtab for comments and many stimulating discussions. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Properties of the crystalline silicon strained via cavitation impact Article published earlier |
| spellingShingle | Properties of the crystalline silicon strained via cavitation impact Savkina, R.K. |
| title | Properties of the crystalline silicon strained via cavitation impact |
| title_full | Properties of the crystalline silicon strained via cavitation impact |
| title_fullStr | Properties of the crystalline silicon strained via cavitation impact |
| title_full_unstemmed | Properties of the crystalline silicon strained via cavitation impact |
| title_short | Properties of the crystalline silicon strained via cavitation impact |
| title_sort | properties of the crystalline silicon strained via cavitation impact |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/117600 |
| work_keys_str_mv | AT savkinark propertiesofthecrystallinesiliconstrainedviacavitationimpact |