Role of dislocations in formation of ohmic contacts to heavily doped n-Si
We present experimental results concerning a high density of structural defects
 (in particular, dislocations) in the near-contact region of heavily doped n-silicon. They
 appear in the course of firing Au Pd Ti Pd -Si n ohmic contact at 450С for
 10 min in a vacuum of ~10 Pa...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2013 |
| Main Authors: | , , , , , , , , , , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2013
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/117675 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Role of dislocations in formation of ohmic contacts
 to heavily doped n-Si / A.E. Belyaev, V.A. Pilipenko, V.M. Anischik, T.V. Petlitskaya, A.V. Sachenko, V.P. Klad’ko, R.V. Konakova, N.S. Boltovets, T.V. Korostinskaya, L.M. Kapitanchuk, Ya.Ya. Kudryk, A.O. Vinogradov, V.N. Sheremet // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 2. — С. 99-110. — Бібліогр.: 35 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1860022974827986944 |
|---|---|
| author | Belyaev, A.E. Pilipenko, V.A. Anischik, V.M. Petlitskaya, T.V. Klad’ko, V.P. Konakova, R.V. Boltovets, N.S. Korostinskaya, T.V. Kapitanchuk, L.M. Kudryk, Ya.Ya. Vinogradov, A.O. Sheremet, V.N. |
| author_facet | Belyaev, A.E. Pilipenko, V.A. Anischik, V.M. Petlitskaya, T.V. Klad’ko, V.P. Konakova, R.V. Boltovets, N.S. Korostinskaya, T.V. Kapitanchuk, L.M. Kudryk, Ya.Ya. Vinogradov, A.O. Sheremet, V.N. |
| citation_txt | Role of dislocations in formation of ohmic contacts
 to heavily doped n-Si / A.E. Belyaev, V.A. Pilipenko, V.M. Anischik, T.V. Petlitskaya, A.V. Sachenko, V.P. Klad’ko, R.V. Konakova, N.S. Boltovets, T.V. Korostinskaya, L.M. Kapitanchuk, Ya.Ya. Kudryk, A.O. Vinogradov, V.N. Sheremet // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 2. — С. 99-110. — Бібліогр.: 35 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | We present experimental results concerning a high density of structural defects
(in particular, dislocations) in the near-contact region of heavily doped n-silicon. They
appear in the course of firing Au Pd Ti Pd -Si n ohmic contact at 450С for
10 min in a vacuum of ~10 Pa⁻⁴ . These defects lead to appearance of metal shunts that
determine the current flow mechanism in these ohmic contacts. The calculated and
experimental temperature dependences of contact resistivity, ρс(Т), are in good
agreement. It is shown that ρс increases with temperature. This is characteristic of a
model of ohmic contacts with a high dislocation density in the near-contact region of
semiconductor
|
| first_indexed | 2025-12-07T16:48:39Z |
| format | Article |
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| id | nasplib_isofts_kiev_ua-123456789-117675 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T16:48:39Z |
| publishDate | 2013 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Belyaev, A.E. Pilipenko, V.A. Anischik, V.M. Petlitskaya, T.V. Klad’ko, V.P. Konakova, R.V. Boltovets, N.S. Korostinskaya, T.V. Kapitanchuk, L.M. Kudryk, Ya.Ya. Vinogradov, A.O. Sheremet, V.N. 2017-05-26T08:55:12Z 2017-05-26T08:55:12Z 2013 Role of dislocations in formation of ohmic contacts
 to heavily doped n-Si / A.E. Belyaev, V.A. Pilipenko, V.M. Anischik, T.V. Petlitskaya, A.V. Sachenko, V.P. Klad’ko, R.V. Konakova, N.S. Boltovets, T.V. Korostinskaya, L.M. Kapitanchuk, Ya.Ya. Kudryk, A.O. Vinogradov, V.N. Sheremet // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 2. — С. 99-110. — Бібліогр.: 35 назв. — англ. 1560-8034 PACS 73.40.Ns; 73.40.Cg, 85.40.-e https://nasplib.isofts.kiev.ua/handle/123456789/117675 We present experimental results concerning a high density of structural defects
 (in particular, dislocations) in the near-contact region of heavily doped n-silicon. They
 appear in the course of firing Au Pd Ti Pd -Si n ohmic contact at 450С for
 10 min in a vacuum of ~10 Pa⁻⁴ . These defects lead to appearance of metal shunts that
 determine the current flow mechanism in these ohmic contacts. The calculated and
 experimental temperature dependences of contact resistivity, ρс(Т), are in good
 agreement. It is shown that ρс increases with temperature. This is characteristic of a
 model of ohmic contacts with a high dislocation density in the near-contact region of
 semiconductor This work was supported by the State Fund for
 Fundamental Researches SFFR-BRFFR-2013 (Project
 54.1/012). en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Role of dislocations in formation of ohmic contacts to heavily doped n-Si Article published earlier |
| spellingShingle | Role of dislocations in formation of ohmic contacts to heavily doped n-Si Belyaev, A.E. Pilipenko, V.A. Anischik, V.M. Petlitskaya, T.V. Klad’ko, V.P. Konakova, R.V. Boltovets, N.S. Korostinskaya, T.V. Kapitanchuk, L.M. Kudryk, Ya.Ya. Vinogradov, A.O. Sheremet, V.N. |
| title | Role of dislocations in formation of ohmic contacts to heavily doped n-Si |
| title_full | Role of dislocations in formation of ohmic contacts to heavily doped n-Si |
| title_fullStr | Role of dislocations in formation of ohmic contacts to heavily doped n-Si |
| title_full_unstemmed | Role of dislocations in formation of ohmic contacts to heavily doped n-Si |
| title_short | Role of dislocations in formation of ohmic contacts to heavily doped n-Si |
| title_sort | role of dislocations in formation of ohmic contacts to heavily doped n-si |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/117675 |
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