ZnO as a conductive layer prepared by ALD for solar cells based on n-CdS/n-CdTe/p-Cu₁.₈S heterostructure

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2013
• Hauptverfasser: Semikina, T.V., Mamykin, S.V., Godlewski, M., Luka, G., Pietruszka, R., Kopalko, K., Krajewski, T.A., Gierałtowska, S., Wachnicki, L., Shmyryeva, L.N.
• Format: Artikel
• Sprache: English
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2013
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/117676
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: ZnO as a conductive layer prepared by ALD for solar cells based on n-CdS/n-CdTe/p-Cu₁.₈S heterostructure / T.V. Semikina, S.V. Mamykin, M. Godlewski, G. Luka, R. Pietruszka, K. Kopalko, T.A. Krajewski, S. Gieraltowska, L. Wachnicki, L.N. Shmyryeva // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 2. — С. 111-116. — Бібліогр.: 20 назв. — англ.

ZnO films with high conductivity are obtained by atomic layer deposition for application in solar cells based on n CdS/ n CdTe / p Cu₁.₈S heterostructure. The parameters of solar cells with ZnO electrode are calculated from light and dark currentvoltage characteristics and compared with those obt...