ZnO as a conductive layer prepared by ALD for solar cells based on n-CdS/n-CdTe/p-Cu₁.₈S heterostructure

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2013
• Hauptverfasser: Semikina, T.V., Mamykin, S.V., Godlewski, M., Luka, G., Pietruszka, R., Kopalko, K., Krajewski, T.A., Gierałtowska, S., Wachnicki, L., Shmyryeva, L.N.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2013
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/117676
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: ZnO as a conductive layer prepared by ALD for solar cells based on n-CdS/n-CdTe/p-Cu₁.₈S heterostructure / T.V. Semikina, S.V. Mamykin, M. Godlewski, G. Luka, R. Pietruszka, K. Kopalko, T.A. Krajewski, S. Gieraltowska, L. Wachnicki, L.N. Shmyryeva // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 2. — С. 111-116. — Бібліогр.: 20 назв. — англ.

ZnO films with high conductivity are obtained by atomic layer deposition for
 application in solar cells based on n CdS/ n CdTe / p Cu₁.₈S heterostructure. The
 parameters of solar cells with ZnO electrode are calculated from light and dark currentvoltage characteristics and compared with those obtained for structures with Mo contact.
 The advantages of ZnO electrode are discussed.