ZnO as a conductive layer prepared by ALD for solar cells based on n-CdS/n-CdTe/p-Cu₁.₈S heterostructure
ZnO films with high conductivity are obtained by atomic layer deposition for
 application in solar cells based on n CdS/ n CdTe / p Cu₁.₈S heterostructure. The
 parameters of solar cells with ZnO electrode are calculated from light and dark currentvoltage characteristics and compare...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2013 |
| Main Authors: | , , , , , , , , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2013
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/117676 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | ZnO as a conductive layer prepared by ALD for solar cells based on n-CdS/n-CdTe/p-Cu₁.₈S heterostructure / T.V. Semikina, S.V. Mamykin, M. Godlewski, G. Luka, R. Pietruszka, K. Kopalko, T.A. Krajewski, S. Gieraltowska, L. Wachnicki, L.N. Shmyryeva // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 2. — С. 111-116. — Бібліогр.: 20 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862658222832222208 |
|---|---|
| author | Semikina, T.V. Mamykin, S.V. Godlewski, M. Luka, G. Pietruszka, R. Kopalko, K. Krajewski, T.A. Gierałtowska, S. Wachnicki, L. Shmyryeva, L.N. |
| author_facet | Semikina, T.V. Mamykin, S.V. Godlewski, M. Luka, G. Pietruszka, R. Kopalko, K. Krajewski, T.A. Gierałtowska, S. Wachnicki, L. Shmyryeva, L.N. |
| citation_txt | ZnO as a conductive layer prepared by ALD for solar cells based on n-CdS/n-CdTe/p-Cu₁.₈S heterostructure / T.V. Semikina, S.V. Mamykin, M. Godlewski, G. Luka, R. Pietruszka, K. Kopalko, T.A. Krajewski, S. Gieraltowska, L. Wachnicki, L.N. Shmyryeva // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 2. — С. 111-116. — Бібліогр.: 20 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | ZnO films with high conductivity are obtained by atomic layer deposition for
application in solar cells based on n CdS/ n CdTe / p Cu₁.₈S heterostructure. The
parameters of solar cells with ZnO electrode are calculated from light and dark currentvoltage characteristics and compared with those obtained for structures with Mo contact.
The advantages of ZnO electrode are discussed.
|
| first_indexed | 2025-12-02T08:40:08Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-117676 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-02T08:40:08Z |
| publishDate | 2013 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Semikina, T.V. Mamykin, S.V. Godlewski, M. Luka, G. Pietruszka, R. Kopalko, K. Krajewski, T.A. Gierałtowska, S. Wachnicki, L. Shmyryeva, L.N. 2017-05-26T08:56:39Z 2017-05-26T08:56:39Z 2013 ZnO as a conductive layer prepared by ALD for solar cells based on n-CdS/n-CdTe/p-Cu₁.₈S heterostructure / T.V. Semikina, S.V. Mamykin, M. Godlewski, G. Luka, R. Pietruszka, K. Kopalko, T.A. Krajewski, S. Gieraltowska, L. Wachnicki, L.N. Shmyryeva // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 2. — С. 111-116. — Бібліогр.: 20 назв. — англ. 1560-8034 PACS 77.55.hf; 88.40.jm, jn, jp https://nasplib.isofts.kiev.ua/handle/123456789/117676 ZnO films with high conductivity are obtained by atomic layer deposition for
 application in solar cells based on n CdS/ n CdTe / p Cu₁.₈S heterostructure. The
 parameters of solar cells with ZnO electrode are calculated from light and dark currentvoltage characteristics and compared with those obtained for structures with Mo contact.
 The advantages of ZnO electrode are discussed. This work was partially supported by the European
 Union within the European Regional Development
 Fund, through the Innovative Economy grant
 ( POIG.01.01.02 - 00 -108/09 ). en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics ZnO as a conductive layer prepared by ALD for solar cells based on n-CdS/n-CdTe/p-Cu₁.₈S heterostructure Article published earlier |
| spellingShingle | ZnO as a conductive layer prepared by ALD for solar cells based on n-CdS/n-CdTe/p-Cu₁.₈S heterostructure Semikina, T.V. Mamykin, S.V. Godlewski, M. Luka, G. Pietruszka, R. Kopalko, K. Krajewski, T.A. Gierałtowska, S. Wachnicki, L. Shmyryeva, L.N. |
| title | ZnO as a conductive layer prepared by ALD for solar cells based on n-CdS/n-CdTe/p-Cu₁.₈S heterostructure |
| title_full | ZnO as a conductive layer prepared by ALD for solar cells based on n-CdS/n-CdTe/p-Cu₁.₈S heterostructure |
| title_fullStr | ZnO as a conductive layer prepared by ALD for solar cells based on n-CdS/n-CdTe/p-Cu₁.₈S heterostructure |
| title_full_unstemmed | ZnO as a conductive layer prepared by ALD for solar cells based on n-CdS/n-CdTe/p-Cu₁.₈S heterostructure |
| title_short | ZnO as a conductive layer prepared by ALD for solar cells based on n-CdS/n-CdTe/p-Cu₁.₈S heterostructure |
| title_sort | zno as a conductive layer prepared by ald for solar cells based on n-cds/n-cdte/p-cu₁.₈s heterostructure |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/117676 |
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