ZnO as a conductive layer prepared by ALD for solar cells based on n-CdS/n-CdTe/p-Cu₁.₈S heterostructure

ZnO as a conductive layer prepared by ALD for solar cells based on n-CdS/n-CdTe/p-Cu₁.₈S heterostructure

ZnO films with high conductivity are obtained by atomic layer deposition for application in solar cells based on n CdS/ n CdTe / p Cu₁.₈S heterostructure. The parameters of solar cells with ZnO electrode are calculated from light and dark currentvoltage characteristics and compared with those obt...

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Бібліографічні деталі
Опубліковано в: :Semiconductor Physics Quantum Electronics & Optoelectronics
Дата:2013
Автори: Semikina, T.V., Mamykin, S.V., Godlewski, M., Luka, G., Pietruszka, R., Kopalko, K., Krajewski, T.A., Gierałtowska, S., Wachnicki, L., Shmyryeva, L.N.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2013
Онлайн доступ:https://nasplib.isofts.kiev.ua/handle/123456789/117676
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:ZnO as a conductive layer prepared by ALD for solar cells based on n-CdS/n-CdTe/p-Cu₁.₈S heterostructure / T.V. Semikina, S.V. Mamykin, M. Godlewski, G. Luka, R. Pietruszka, K. Kopalko, T.A. Krajewski, S. Gieraltowska, L. Wachnicki, L.N. Shmyryeva // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 2. — С. 111-116. — Бібліогр.: 20 назв. — англ.

Репозитарії

Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-117676
record_format dspace
spelling Semikina, T.V.
Mamykin, S.V.
Godlewski, M.
Luka, G.
Pietruszka, R.
Kopalko, K.
Krajewski, T.A.
Gierałtowska, S.
Wachnicki, L.
Shmyryeva, L.N.
2017-05-26T08:56:39Z
2017-05-26T08:56:39Z
2013
ZnO as a conductive layer prepared by ALD for solar cells based on n-CdS/n-CdTe/p-Cu₁.₈S heterostructure / T.V. Semikina, S.V. Mamykin, M. Godlewski, G. Luka, R. Pietruszka, K. Kopalko, T.A. Krajewski, S. Gieraltowska, L. Wachnicki, L.N. Shmyryeva // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 2. — С. 111-116. — Бібліогр.: 20 назв. — англ.
1560-8034
PACS 77.55.hf; 88.40.jm, jn, jp
https://nasplib.isofts.kiev.ua/handle/123456789/117676
ZnO films with high conductivity are obtained by atomic layer deposition for application in solar cells based on n CdS/ n CdTe / p Cu₁.₈S heterostructure. The parameters of solar cells with ZnO electrode are calculated from light and dark currentvoltage characteristics and compared with those obtained for structures with Mo contact. The advantages of ZnO electrode are discussed.
This work was partially supported by the European Union within the European Regional Development Fund, through the Innovative Economy grant ( POIG.01.01.02 - 00 -108/09 ).
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
ZnO as a conductive layer prepared by ALD for solar cells based on n-CdS/n-CdTe/p-Cu₁.₈S heterostructure
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title ZnO as a conductive layer prepared by ALD for solar cells based on n-CdS/n-CdTe/p-Cu₁.₈S heterostructure
spellingShingle ZnO as a conductive layer prepared by ALD for solar cells based on n-CdS/n-CdTe/p-Cu₁.₈S heterostructure
Semikina, T.V.
Mamykin, S.V.
Godlewski, M.
Luka, G.
Pietruszka, R.
Kopalko, K.
Krajewski, T.A.
Gierałtowska, S.
Wachnicki, L.
Shmyryeva, L.N.
title_short ZnO as a conductive layer prepared by ALD for solar cells based on n-CdS/n-CdTe/p-Cu₁.₈S heterostructure
title_full ZnO as a conductive layer prepared by ALD for solar cells based on n-CdS/n-CdTe/p-Cu₁.₈S heterostructure
title_fullStr ZnO as a conductive layer prepared by ALD for solar cells based on n-CdS/n-CdTe/p-Cu₁.₈S heterostructure
title_full_unstemmed ZnO as a conductive layer prepared by ALD for solar cells based on n-CdS/n-CdTe/p-Cu₁.₈S heterostructure
title_sort zno as a conductive layer prepared by ald for solar cells based on n-cds/n-cdte/p-cu₁.₈s heterostructure
author Semikina, T.V.
Mamykin, S.V.
Godlewski, M.
Luka, G.
Pietruszka, R.
Kopalko, K.
Krajewski, T.A.
Gierałtowska, S.
Wachnicki, L.
Shmyryeva, L.N.
author_facet Semikina, T.V.
Mamykin, S.V.
Godlewski, M.
Luka, G.
Pietruszka, R.
Kopalko, K.
Krajewski, T.A.
Gierałtowska, S.
Wachnicki, L.
Shmyryeva, L.N.
publishDate 2013
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description ZnO films with high conductivity are obtained by atomic layer deposition for application in solar cells based on n CdS/ n CdTe / p Cu₁.₈S heterostructure. The parameters of solar cells with ZnO electrode are calculated from light and dark currentvoltage characteristics and compared with those obtained for structures with Mo contact. The advantages of ZnO electrode are discussed.
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/117676
citation_txt ZnO as a conductive layer prepared by ALD for solar cells based on n-CdS/n-CdTe/p-Cu₁.₈S heterostructure / T.V. Semikina, S.V. Mamykin, M. Godlewski, G. Luka, R. Pietruszka, K. Kopalko, T.A. Krajewski, S. Gieraltowska, L. Wachnicki, L.N. Shmyryeva // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 2. — С. 111-116. — Бібліогр.: 20 назв. — англ.
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first_indexed 2025-12-02T08:40:08Z
last_indexed 2025-12-02T08:40:08Z
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