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Photo-thermo-acoustic analysis of heterogeneous semiconductor structures under pulse laser irradiation

The analysis of photo-thermo-acoustic transformation in materials with the modified properties of a surface layer has been made in this work. Formation of a photoacoustic response in a layered structure of the type “implanted layer + crystalline Si substrate” as a result of its irradiation by one...

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Veröffentlicht in:	Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:	2011
Hauptverfasser:	Burbelo, R., Isaiev, M., Kuzmich, A.
Format:	Artikel
Sprache:	Englisch
Veröffentlicht:	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2011
Online Zugang:	https://nasplib.isofts.kiev.ua/handle/123456789/117708
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!
Назва журналу:	Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:	Photo-thermo-acoustic analysis of heterogeneous semiconductor structures under pulse laser irradiation / R. Burbelo, M. Isaiev, A. Kuzmich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 2. — С. 167-169. — Бібліогр.: 4 назв. — англ.

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