Influence of electron-electron drag on piezoresistance of n-Si
Piezoresistance of n-Si is considered with due regard for inter-valley drag. It has been shown that inter-valley drag gains the piezocoefficient and diminishes the mobility. In the region of nondegenerate carriers, the effect of drag increases when the carrier concentration rises and temperature fal...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2011 |
| 1. Verfasser: | |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2011
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/117714 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Influence of electron-electron drag on piezoresistance of n-Si / I.I. Boiko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 2. — С. 183-187. — Бібліогр.: 6 назв. — англ. |