Influence of electron-electron drag on piezoresistance of n-Si
Piezoresistance of n-Si is considered with due regard for inter-valley drag. It has been shown that inter-valley drag gains the piezocoefficient and diminishes the mobility. In the region of nondegenerate carriers, the effect of drag increases when the carrier concentration rises and temperature fal...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2011 |
| Main Author: | |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2011
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/117714 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Influence of electron-electron drag on piezoresistance of n-Si / I.I. Boiko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 2. — С. 183-187. — Бібліогр.: 6 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862594850339160064 |
|---|---|
| author | Boiko, I.I. |
| author_facet | Boiko, I.I. |
| citation_txt | Influence of electron-electron drag on piezoresistance of n-Si / I.I. Boiko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 2. — С. 183-187. — Бібліогр.: 6 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Piezoresistance of n-Si is considered with due regard for inter-valley drag. It has been shown that inter-valley drag gains the piezocoefficient and diminishes the mobility. In the region of nondegenerate carriers, the effect of drag increases when the carrier concentration rises and temperature falls.
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| first_indexed | 2025-11-27T11:29:00Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-117714 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-27T11:29:00Z |
| publishDate | 2011 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Boiko, I.I. 2017-05-26T12:54:37Z 2017-05-26T12:54:37Z 2011 Influence of electron-electron drag on piezoresistance of n-Si / I.I. Boiko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 2. — С. 183-187. — Бібліогр.: 6 назв. — англ. 1560-8034 PACS 61.72, 72.20 https://nasplib.isofts.kiev.ua/handle/123456789/117714 Piezoresistance of n-Si is considered with due regard for inter-valley drag. It has been shown that inter-valley drag gains the piezocoefficient and diminishes the mobility. In the region of nondegenerate carriers, the effect of drag increases when the carrier concentration rises and temperature falls. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Influence of electron-electron drag on piezoresistance of n-Si Article published earlier |
| spellingShingle | Influence of electron-electron drag on piezoresistance of n-Si Boiko, I.I. |
| title | Influence of electron-electron drag on piezoresistance of n-Si |
| title_full | Influence of electron-electron drag on piezoresistance of n-Si |
| title_fullStr | Influence of electron-electron drag on piezoresistance of n-Si |
| title_full_unstemmed | Influence of electron-electron drag on piezoresistance of n-Si |
| title_short | Influence of electron-electron drag on piezoresistance of n-Si |
| title_sort | influence of electron-electron drag on piezoresistance of n-si |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/117714 |
| work_keys_str_mv | AT boikoii influenceofelectronelectrondragonpiezoresistanceofnsi |