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Influence of electron-electron drag on piezoresistance of n-Si

Piezoresistance of n-Si is considered with due regard for inter-valley drag. It has been shown that inter-valley drag gains the piezocoefficient and diminishes the mobility. In the region of nondegenerate carriers, the effect of drag increases when the carrier concentration rises and temperature fal...

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Published in:	Semiconductor Physics Quantum Electronics & Optoelectronics
Date:	2011
Main Author:	Boiko, I.I.
Format:	Article
Language:	English
Published:	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2011
Online Access:	https://nasplib.isofts.kiev.ua/handle/123456789/117714
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Journal Title:	Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:	Influence of electron-electron drag on piezoresistance of n-Si / I.I. Boiko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 2. — С. 183-187. — Бібліогр.: 6 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine

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