Dynamic properties and avalanche noise analysis of 4H-SiC over wz-GaN based IMPATTs at mm-wave window frequency
The mm-wave as well as noise properties of IMPATT diodes for the D-band are efficiently determined, with 4H-SiC and wurtzite type GaN as base materials, using advanced computer simulation techniques developed by the authors. The breakdown voltage (180 V) and efficiency (14.7%) is higher in case of 4...
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| Date: | 2011 |
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| Main Authors: | , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2011
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| Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/117715 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Dynamic properties and avalanche noise analysis of 4H-SiC over wz-GaN based IMPATTs at mm-wave window frequency / P.R. Tripathy, M. Mukherjee, S.P. Pati // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 2. — С. 137-144. — Бібліогр.: 26 назв. — англ. |