APA (7th ed.) Citation

Elgomati, H., Ahmad, I., Salehuddin, F., Hamid, F., Zaharim, A., Majlis, B., & Apte, P. (2011). Optimal solution in producing 32-nm CMOS technology transistor with desired leakage current. Semiconductor Physics Quantum Electronics & Optoelectronics.

Chicago Style (17th ed.) Citation

Elgomati, H.A, I. Ahmad, F. Salehuddin, F.A Hamid, A. Zaharim, B.Y Majlis, and P.R Apte. "Optimal Solution in Producing 32-nm CMOS Technology Transistor with Desired Leakage Current." Semiconductor Physics Quantum Electronics & Optoelectronics 2011.

MLA (8th ed.) Citation

Elgomati, H.A, et al. "Optimal Solution in Producing 32-nm CMOS Technology Transistor with Desired Leakage Current." Semiconductor Physics Quantum Electronics & Optoelectronics, 2011.

Warning: These citations may not always be 100% accurate.