Electrical properties of MIS structures with silicon nanoclusters
The theoretical and experimental investigations of electrical properties of the
 Al-SiO₂-( − ncsSi -SiO₂-Si structures grown using high temperature annealing SiOx, x < 2, have been carried out. It has been experimentally found that the Al-SiO₂-( − ncsSi )-SiO₂-Si structures with the t...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 2011 |
| Автори: | , , , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2011
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/117722 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Electrical properties of MIS structures with silicon nanoclusters / S.V. Bunak, V.V. Ilchenko, V.P. Melnik, I.M. Hatsevych, B.N. Romanyuk, A.G. Shkavro, O.V. Tretyak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 2. — С. 241-246. — Бібліогр.: 10 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862738391931551744 |
|---|---|
| author | Bunak, S.V. Ilchenko, V.V. Melnik, V.P. Hatsevych, I.M. Romanyuk, B.N. Shkavro, A.G. Tretyak, O.V. |
| author_facet | Bunak, S.V. Ilchenko, V.V. Melnik, V.P. Hatsevych, I.M. Romanyuk, B.N. Shkavro, A.G. Tretyak, O.V. |
| citation_txt | Electrical properties of MIS structures with silicon nanoclusters / S.V. Bunak, V.V. Ilchenko, V.P. Melnik, I.M. Hatsevych, B.N. Romanyuk, A.G. Shkavro, O.V. Tretyak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 2. — С. 241-246. — Бібліогр.: 10 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The theoretical and experimental investigations of electrical properties of the
Al-SiO₂-( − ncsSi -SiO₂-Si structures grown using high temperature annealing SiOx, x < 2, have been carried out. It has been experimentally found that the Al-SiO₂-( − ncsSi )-SiO₂-Si structures with the tunnel dielectric layer revealed the effect of dynamic memory. Electric properties and parameters of the interface states located between − ncsSi and SiO₂ were studied in detail by measuring of current-voltage, capacitance-voltage, and thermally stimulated current characteristics.
|
| first_indexed | 2025-12-07T20:03:50Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-117722 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T20:03:50Z |
| publishDate | 2011 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Bunak, S.V. Ilchenko, V.V. Melnik, V.P. Hatsevych, I.M. Romanyuk, B.N. Shkavro, A.G. Tretyak, O.V. 2017-05-26T13:09:03Z 2017-05-26T13:09:03Z 2011 Electrical properties of MIS structures with silicon nanoclusters / S.V. Bunak, V.V. Ilchenko, V.P. Melnik, I.M. Hatsevych, B.N. Romanyuk, A.G. Shkavro, O.V. Tretyak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 2. — С. 241-246. — Бібліогр.: 10 назв. — англ. 1560-8034 PACS 72.20.Ee, 73.40.Qv https://nasplib.isofts.kiev.ua/handle/123456789/117722 The theoretical and experimental investigations of electrical properties of the
 Al-SiO₂-( − ncsSi -SiO₂-Si structures grown using high temperature annealing SiOx, x < 2, have been carried out. It has been experimentally found that the Al-SiO₂-( − ncsSi )-SiO₂-Si structures with the tunnel dielectric layer revealed the effect of dynamic memory. Electric properties and parameters of the interface states located between − ncsSi and SiO₂ were studied in detail by measuring of current-voltage, capacitance-voltage, and thermally stimulated current characteristics. This work was supported by Grant №M/90–2010 of Ministry for Education and Science of Ukraine. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Electrical properties of MIS structures with silicon nanoclusters Article published earlier |
| spellingShingle | Electrical properties of MIS structures with silicon nanoclusters Bunak, S.V. Ilchenko, V.V. Melnik, V.P. Hatsevych, I.M. Romanyuk, B.N. Shkavro, A.G. Tretyak, O.V. |
| title | Electrical properties of MIS structures with silicon nanoclusters |
| title_full | Electrical properties of MIS structures with silicon nanoclusters |
| title_fullStr | Electrical properties of MIS structures with silicon nanoclusters |
| title_full_unstemmed | Electrical properties of MIS structures with silicon nanoclusters |
| title_short | Electrical properties of MIS structures with silicon nanoclusters |
| title_sort | electrical properties of mis structures with silicon nanoclusters |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/117722 |
| work_keys_str_mv | AT bunaksv electricalpropertiesofmisstructureswithsiliconnanoclusters AT ilchenkovv electricalpropertiesofmisstructureswithsiliconnanoclusters AT melnikvp electricalpropertiesofmisstructureswithsiliconnanoclusters AT hatsevychim electricalpropertiesofmisstructureswithsiliconnanoclusters AT romanyukbn electricalpropertiesofmisstructureswithsiliconnanoclusters AT shkavroag electricalpropertiesofmisstructureswithsiliconnanoclusters AT tretyakov electricalpropertiesofmisstructureswithsiliconnanoclusters |