X-ray diffraction investigation of GaN layers on Si(111) and Al₂O₃ (0001) substrates

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2013
• Main Authors: Safriuk, N.V., Stanchu, G.V., Kuchuk, A.V., Kladko, V.P., Belyaev, A.E., Machulin, V.F.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2013
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/117727
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: X-ray diffraction investigation of GaN layers on Si(111) and Al₂O₃ (0001) substrates / N.V. Safriuk, G.V. Stanchu, A.V. Kuchuk, V.P. Kladko, A.E. Belyaev, V.F. Machulin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 3. — С. 265-272. — Бібліогр.: 20 назв. — англ.

Methodical approaches to the analysis of X-ray data for GaN films grown on various buffer layers and different substrates are presented in this work. Justification of dislocation structure investigation by various methods was analyzed and approaches for evaluation of deformation level and relaxat...