X-ray diffraction investigation of GaN layers on Si(111) and Al₂O₃ (0001) substrates

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2013
• Hauptverfasser: Safriuk, N.V., Stanchu, G.V., Kuchuk, A.V., Kladko, V.P., Belyaev, A.E., Machulin, V.F.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2013
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/117727
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: X-ray diffraction investigation of GaN layers on Si(111) and Al₂O₃ (0001) substrates / N.V. Safriuk, G.V. Stanchu, A.V. Kuchuk, V.P. Kladko, A.E. Belyaev, V.F. Machulin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 3. — С. 265-272. — Бібліогр.: 20 назв. — англ.

Methodical approaches to the analysis of X-ray data for GaN films grown on
 various buffer layers and different substrates are presented in this work. Justification of
 dislocation structure investigation by various methods was analyzed and approaches for
 evaluation of defor...