X-ray diffraction investigation of GaN layers on Si(111) and Al₂O₃ (0001) substrates
Methodical approaches to the analysis of X-ray data for GaN films grown on
 various buffer layers and different substrates are presented in this work. Justification of
 dislocation structure investigation by various methods was analyzed and approaches for
 evaluation of defor...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2013 |
| Main Authors: | , , , , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2013
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/117727 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | X-ray diffraction investigation of GaN layers on Si(111) and Al₂O₃ (0001) substrates / N.V. Safriuk, G.V. Stanchu, A.V. Kuchuk, V.P. Kladko, A.E. Belyaev, V.F. Machulin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 3. — С. 265-272. — Бібліогр.: 20 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862732975832039424 |
|---|---|
| author | Safriuk, N.V. Stanchu, G.V. Kuchuk, A.V. Kladko, V.P. Belyaev, A.E. Machulin, V.F. |
| author_facet | Safriuk, N.V. Stanchu, G.V. Kuchuk, A.V. Kladko, V.P. Belyaev, A.E. Machulin, V.F. |
| citation_txt | X-ray diffraction investigation of GaN layers on Si(111) and Al₂O₃ (0001) substrates / N.V. Safriuk, G.V. Stanchu, A.V. Kuchuk, V.P. Kladko, A.E. Belyaev, V.F. Machulin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 3. — С. 265-272. — Бібліогр.: 20 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Methodical approaches to the analysis of X-ray data for GaN films grown on
various buffer layers and different substrates are presented in this work. Justification of
dislocation structure investigation by various methods was analyzed and approaches for
evaluation of deformation level and relaxation are discussed. Clarity and accuracy of
obtained structure characteristics of nitride films are under discussion. Optimization
methods for experimental data processing are shown. Structural properties were obtained
using high resolution X-ray diffraction with two types of scans and
reciprocal space maps. Microscopic nature of spatial inhomogeneities in these structures
(deformations and dislocation density) and influence of the buffer layer thickness on
properties of GaN layer were discussed with account of obtained results.
|
| first_indexed | 2025-12-07T19:34:23Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-117727 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T19:34:23Z |
| publishDate | 2013 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Safriuk, N.V. Stanchu, G.V. Kuchuk, A.V. Kladko, V.P. Belyaev, A.E. Machulin, V.F. 2017-05-26T13:44:07Z 2017-05-26T13:44:07Z 2013 X-ray diffraction investigation of GaN layers on Si(111) and Al₂O₃ (0001) substrates / N.V. Safriuk, G.V. Stanchu, A.V. Kuchuk, V.P. Kladko, A.E. Belyaev, V.F. Machulin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 3. — С. 265-272. — Бібліогр.: 20 назв. — англ. 1560-8034 PACS 61.05.cp, 61.72.uj, 68.65.-k https://nasplib.isofts.kiev.ua/handle/123456789/117727 Methodical approaches to the analysis of X-ray data for GaN films grown on
 various buffer layers and different substrates are presented in this work. Justification of
 dislocation structure investigation by various methods was analyzed and approaches for
 evaluation of deformation level and relaxation are discussed. Clarity and accuracy of
 obtained structure characteristics of nitride films are under discussion. Optimization
 methods for experimental data processing are shown. Structural properties were obtained
 using high resolution X-ray diffraction with two types of scans and
 reciprocal space maps. Microscopic nature of spatial inhomogeneities in these structures
 (deformations and dislocation density) and influence of the buffer layer thickness on
 properties of GaN layer were discussed with account of obtained results. This paper was supported by the National Academy of
 Sciences of Ukraine within the framework of the
 scientific-technological program “Nanotechnology and
 Nanomaterials”. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics X-ray diffraction investigation of GaN layers on Si(111) and Al₂O₃ (0001) substrates Article published earlier |
| spellingShingle | X-ray diffraction investigation of GaN layers on Si(111) and Al₂O₃ (0001) substrates Safriuk, N.V. Stanchu, G.V. Kuchuk, A.V. Kladko, V.P. Belyaev, A.E. Machulin, V.F. |
| title | X-ray diffraction investigation of GaN layers on Si(111) and Al₂O₃ (0001) substrates |
| title_full | X-ray diffraction investigation of GaN layers on Si(111) and Al₂O₃ (0001) substrates |
| title_fullStr | X-ray diffraction investigation of GaN layers on Si(111) and Al₂O₃ (0001) substrates |
| title_full_unstemmed | X-ray diffraction investigation of GaN layers on Si(111) and Al₂O₃ (0001) substrates |
| title_short | X-ray diffraction investigation of GaN layers on Si(111) and Al₂O₃ (0001) substrates |
| title_sort | x-ray diffraction investigation of gan layers on si(111) and al₂o₃ (0001) substrates |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/117727 |
| work_keys_str_mv | AT safriuknv xraydiffractioninvestigationofganlayersonsi111andal2o30001substrates AT stanchugv xraydiffractioninvestigationofganlayersonsi111andal2o30001substrates AT kuchukav xraydiffractioninvestigationofganlayersonsi111andal2o30001substrates AT kladkovp xraydiffractioninvestigationofganlayersonsi111andal2o30001substrates AT belyaevae xraydiffractioninvestigationofganlayersonsi111andal2o30001substrates AT machulinvf xraydiffractioninvestigationofganlayersonsi111andal2o30001substrates |