Intrinsic defects in nonstoichiometric B-SiC nanoparticles studied by pulsed magnetic resonance methods

• Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics
• Дата: 2010
• ISSN: 1560-8034
• Автори: Savchenko, D.V., Pöppl, A., Kalabukhova, E.N., Venger, E.F., Gadzira, M.P., Gnesin, G.G.
• Формат: Стаття
• Мова: Англійська
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2010
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/117738
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Intrinsic defects in nonstoichiometric B-SiC nanoparticles studied by pulsed magnetic resonance methods/ D.V. Savchenko, A. Pöppl, E.N. Kalabukhova, E.F. Venger, M.P. Gadzira, G.G. Gnesin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 43-50. — Бібліогр.: 25 назв. — англ.

Nonstoichiometric B-SiC nanoparticles (np-SiC) have been studied by electron
 paramagnetic resonance (EPR) and pulsed magnetic resonance methods including field
 swept electron spin echo (FS ESE), pulsed electron nuclear double resonance (ENDOR)
 and hyperfine sublevel correlation spectroscopy (HYSCORE). Four ESE signals related
 to the paramagnetic centers labeled D1, D2, D3, D4 with g = 2.0043, g = 2.0029,
 g = 2.0031, g = 2.0037 were resolved in FS ESE spectrum due to their different spin
 relaxation times. As deduced from the study of the superhyperfine structure of the D2
 defect by FS ESE, pulse ENDOR and HYSCORE methods the dominant paramagnetic
 center is a carbon vacancy (Vc) localized in B-SiC crystalline phase of the np-SiC. The
 parameters of the D2 center coincide with those found for the Vc in np-SiC obtained by
 laser pyrolysis method. Three other defects were identified by comparison of their EPR
 parameters with the microstructure of the np-SiC. The D1 defect was attributed to the Vc
 vacancy located in a-SiC crystalline phase. The D3 defect is identified with the carbon
 dangling bonds located in the carbon excess phase. The D4 defect was assigned to a
 threefold-coordinated Si atom bonded with one nitrogen atom, resulting in the formation
 of the local bonding Si-Si2N configuration in a-Si3N4 phase.