Acoustic emission and fluctuations of electroluminescence intensity in light-emitting heterostructures
It was shown that in the GaAsP/GaP and InGaN/GaN heterostructures during
 current passage redistribution of electroluminescence intensity on the structure surface
 takes place simultaneously with radiation of acoustic emission. Local (on surface area)
 fluctuations of electro...
Saved in:
| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2010 |
| Main Authors: | , , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
|
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/117747 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Acoustic emission and fluctuations of electroluminescence intensity
 in light-emitting heterostructures / V.P. Veleschuk, O.V. Lyashenko, Z.K. Vlasenko, M.P. Kysselyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 79-83. — Бібліогр.: 13 назв. — англ. |