Acoustic emission and fluctuations of electroluminescence intensity in light-emitting heterostructures
It was shown that in the GaAsP/GaP and InGaN/GaN heterostructures during
 current passage redistribution of electroluminescence intensity on the structure surface
 takes place simultaneously with radiation of acoustic emission. Local (on surface area)
 fluctuations of electro...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2010 |
| Main Authors: | , , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/117747 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Acoustic emission and fluctuations of electroluminescence intensity
 in light-emitting heterostructures / V.P. Veleschuk, O.V. Lyashenko, Z.K. Vlasenko, M.P. Kysselyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 79-83. — Бібліогр.: 13 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| Summary: | It was shown that in the GaAsP/GaP and InGaN/GaN heterostructures during
current passage redistribution of electroluminescence intensity on the structure surface
takes place simultaneously with radiation of acoustic emission. Local (on surface area)
fluctuations of electroluminescence intensity are observed together with general
degradation of electro-physical parameters.
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| ISSN: | 1560-8034 |