Acoustic emission and fluctuations of electroluminescence intensity in light-emitting heterostructures

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2010
• Hauptverfasser: Veleschuk, V.P., Lyashenko, O.V., Vlasenko, Z.K., Kysselyuk, M.P.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2010
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/117747
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Acoustic emission and fluctuations of electroluminescence intensity
 in light-emitting heterostructures / V.P. Veleschuk, O.V. Lyashenko, Z.K. Vlasenko, M.P. Kysselyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 79-83. — Бібліогр.: 13 назв. — англ.

It was shown that in the GaAsP/GaP and InGaN/GaN heterostructures during
 current passage redistribution of electroluminescence intensity on the structure surface
 takes place simultaneously with radiation of acoustic emission. Local (on surface area)
 fluctuations of electro...