Diluted magnetic layered semiconductor InSe:Mn with high Curie temperature

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2011
• Hauptverfasser: Lashkarev, G.V., Sichkovskyi, V.I., Radchenko, M.V., Aleshkevych, P., Dmitriev, O.I., Butorin, P.E., Kovalyuk, Z.D., Szymczak, R., Slawska-Waniewska, A., Nedelko, N., Yakiela, R., Balagurov, A.M., Beskrovnyy, A.I., Dobrowolsk, W.
• Format: Artikel
• Sprache: English
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2011
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/117758
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Diluted magnetic layered semiconductor InSe:Mn with high Curie temperature / G.V. Lashkarev, V.I. Sichkovskyi, M.V. Radchenko, P. Aleshkevych, O.I. Dmitriev, P.E. Butorin, Z.D. Kovalyuk, R. Szymczak, A. Slawska-Waniewska, N. Nedelko, R. Yakiela, A.M. Balagurov, A.I. Beskrovnyy, W. Dobrowolski // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 263-268. — Бібліогр.: 22 назв. — англ.

We present a detailed study of layered semiconductor InSe doped with Mn. Xray and neutron diffraction analyses of (In,Mn)Se single crystals show the presence of a main phase as In₁−xMnxSe solid solution, the second antiferromagnetic MnSe phase, and traces of In₄ Se₃ Magnetic measurements revea...