Tunneling current via dislocations in InAs and InSb infrared photodiodes
Carrier transport mechanisms are investigated in InAs and InSb infrared
 photodiodes. The photodiodes were prepared by thermal diffusion of Cd and ion
 implantation of Be into InAs and InSb single-crystal substrates of n-type conductivity,
 respectively. The direct current wa...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2011 |
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2011
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/117788 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Tunneling current via dislocations in InAs and InSb infrared photodiodes / A.V. Sukach, V.V. Tetyorkin and N.M. Krolevec // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 4. — С. 416-420. — Бібліогр.: 27 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | Carrier transport mechanisms are investigated in InAs and InSb infrared
photodiodes. The photodiodes were prepared by thermal diffusion of Cd and ion
implantation of Be into InAs and InSb single-crystal substrates of n-type conductivity,
respectively. The direct current was measured as a function of bias voltage and
temperature. The excess tunneling current is observed in the investigated photodiodes at
small forward bias voltages. Experimental proofs are obtained that dislocations are
responsible for this current. A model for the tunneling current via dislocations is briefly
discussed.
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| ISSN: | 1560-8034 |