Tunneling current via dislocations in InAs and InSb infrared photodiodes
Carrier transport mechanisms are investigated in InAs and InSb infrared photodiodes. The photodiodes were prepared by thermal diffusion of Cd and ion implantation of Be into InAs and InSb single-crystal substrates of n-type conductivity, respectively. The direct current was measured as a function...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 2011 |
| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2011
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/117788 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Tunneling current via dislocations in InAs and InSb infrared photodiodes / A.V. Sukach, V.V. Tetyorkin and N.M. Krolevec // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 4. — С. 416-420. — Бібліогр.: 27 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-117788 |
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Sukach, A.V. Tetyorkin, V.V. Krolevec, N.M. 2017-05-26T17:40:17Z 2017-05-26T17:40:17Z 2011 Tunneling current via dislocations in InAs and InSb infrared photodiodes / A.V. Sukach, V.V. Tetyorkin and N.M. Krolevec // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 4. — С. 416-420. — Бібліогр.: 27 назв. — англ. 1560-8034 PACS 61.72.uj, Hh, Lk;73.40.Gk, Kp; 85.60.Dw https://nasplib.isofts.kiev.ua/handle/123456789/117788 Carrier transport mechanisms are investigated in InAs and InSb infrared photodiodes. The photodiodes were prepared by thermal diffusion of Cd and ion implantation of Be into InAs and InSb single-crystal substrates of n-type conductivity, respectively. The direct current was measured as a function of bias voltage and temperature. The excess tunneling current is observed in the investigated photodiodes at small forward bias voltages. Experimental proofs are obtained that dislocations are responsible for this current. A model for the tunneling current via dislocations is briefly discussed. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Tunneling current via dislocations in InAs and InSb infrared photodiodes Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Tunneling current via dislocations in InAs and InSb infrared photodiodes |
| spellingShingle |
Tunneling current via dislocations in InAs and InSb infrared photodiodes Sukach, A.V. Tetyorkin, V.V. Krolevec, N.M. |
| title_short |
Tunneling current via dislocations in InAs and InSb infrared photodiodes |
| title_full |
Tunneling current via dislocations in InAs and InSb infrared photodiodes |
| title_fullStr |
Tunneling current via dislocations in InAs and InSb infrared photodiodes |
| title_full_unstemmed |
Tunneling current via dislocations in InAs and InSb infrared photodiodes |
| title_sort |
tunneling current via dislocations in inas and insb infrared photodiodes |
| author |
Sukach, A.V. Tetyorkin, V.V. Krolevec, N.M. |
| author_facet |
Sukach, A.V. Tetyorkin, V.V. Krolevec, N.M. |
| publishDate |
2011 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
Carrier transport mechanisms are investigated in InAs and InSb infrared
photodiodes. The photodiodes were prepared by thermal diffusion of Cd and ion
implantation of Be into InAs and InSb single-crystal substrates of n-type conductivity,
respectively. The direct current was measured as a function of bias voltage and
temperature. The excess tunneling current is observed in the investigated photodiodes at
small forward bias voltages. Experimental proofs are obtained that dislocations are
responsible for this current. A model for the tunneling current via dislocations is briefly
discussed.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/117788 |
| citation_txt |
Tunneling current via dislocations in InAs and InSb infrared photodiodes / A.V. Sukach, V.V. Tetyorkin and N.M. Krolevec // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 4. — С. 416-420. — Бібліогр.: 27 назв. — англ. |
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| first_indexed |
2025-12-07T20:07:00Z |
| last_indexed |
2025-12-07T20:07:00Z |
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