Energy band gap and electrical conductivity of Cd₁₋xMnxTe alloys with different manganese content
The optical and electrical properties of single Cd₁₋xMnxTe (x = 0.07 - 0.40)
 crystals with p-type conduction and resistivity 10⁴– 10⁸
 Ohm⋅cm have been studied. The
 band gaps of the samples and their temperature dependences have been determined. The
 electrical con...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2011 |
| ISSN: | 1560-8034 |
| Hauptverfasser: | , , , , , , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2011
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/117789 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Energy band gap and electrical conductivity of Cd₁₋xMnxTe alloys with different manganese content / .A. Kosyachenko, I.M. Rarenko, T. Aoki, V.M. Sklyarchuk, O.L. Maslyanchuk, N.S. Yurtsenyuk, Z.І. Zakharuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 4. — С. 421-426. — Бібліогр.: 16 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | The optical and electrical properties of single Cd₁₋xMnxTe (x = 0.07 - 0.40)
crystals with p-type conduction and resistivity 10⁴– 10⁸
Ohm⋅cm have been studied. The
band gaps of the samples and their temperature dependences have been determined. The
electrical conductivity of this material and its temperature variation are explained in
terms of statistics for electrons and holes in semiconductor with taking into account the
compensation process. The energy of ionization and degree of compensation levels
responsible for the electrical conductivity of the samples have been found.
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| ISSN: | 1560-8034 |