Transformations of microdefect structure in silicon crystals under the influence of weak magnetic field
Quantitative characterization of complex microdefect structures in annealed silicon crystals (1150 °С, 40 h) and their transformations after exposing for one day in a weak magnetic field (1 T) has been performed by analyzing the rocking curves, which have been measured by a high-resolution double...
Saved in:
| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2011 |
| Main Authors: | , , , , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2011
|
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/117799 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Transformations of microdefect structure in silicon crystals under the influence of weak magnetic field / T. P. Vladimirova, Ye. M. Kyslovs`kyy, V. B. Molodkin, S. I. Olikhovskii,O. V. Koplak, E. V. Kochelab // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 4. — С. 470-477. — Бібліогр.: 27 назв. — англ. |