Transformations of microdefect structure in silicon crystals under the influence of weak magnetic field

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2011
• Hauptverfasser: Vladimirova, T.P., Kyslovs’kyy, Ye.M., Molodkin, V.B., Olikhovskii, S.I., Koplak, O.V., Kochelab, E.V.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2011
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/117799
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Transformations of microdefect structure in silicon crystals under the influence of weak magnetic field / T. P. Vladimirova, Ye. M. Kyslovs`kyy, V. B. Molodkin, S. I. Olikhovskii,O. V. Koplak, E. V. Kochelab // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 4. — С. 470-477. — Бібліогр.: 27 назв. — англ.

Quantitative characterization of complex microdefect structures in annealed
 silicon crystals (1150 °С, 40 h) and their transformations after exposing for one day in a
 weak magnetic field (1 T) has been performed by analyzing the rocking curves, which
 have been measured by a high-resolution double-crystal X-ray diffractometer. Based on
 the characterization results, which have been obtained by using the formulas of the
 dynamical theory of X-ray diffraction by imperfect crystals with randomly distributed
 microdefects of several types, the concentrations and average sizes of oxygen precipitates
 and dislocation loops after imposing the magnetic field and their dependences on time
 after its removing have been determined.