Transformations of microdefect structure in silicon crystals under the influence of weak magnetic field

Quantitative characterization of complex microdefect structures in annealed silicon crystals (1150 °С, 40 h) and their transformations after exposing for one day in a weak magnetic field (1 T) has been performed by analyzing the rocking curves, which have been measured by a high-resolution double...

Full description

Saved in:
Bibliographic Details
Published in:Semiconductor Physics Quantum Electronics & Optoelectronics
Date:2011
Main Authors: Vladimirova, T.P., Kyslovs’kyy, Ye.M., Molodkin, V.B., Olikhovskii, S.I., Koplak, O.V., Kochelab, E.V.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2011
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/117799
Tags: Add Tag
No Tags, Be the first to tag this record!
Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Transformations of microdefect structure in silicon crystals under the influence of weak magnetic field / T. P. Vladimirova, Ye. M. Kyslovs`kyy, V. B. Molodkin, S. I. Olikhovskii,O. V. Koplak, E. V. Kochelab // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 4. — С. 470-477. — Бібліогр.: 27 назв. — англ.

Institution

Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-117799
record_format dspace
spelling Vladimirova, T.P.
Kyslovs’kyy, Ye.M.
Molodkin, V.B.
Olikhovskii, S.I.
Koplak, O.V.
Kochelab, E.V.
2017-05-26T17:50:14Z
2017-05-26T17:50:14Z
2011
Transformations of microdefect structure in silicon crystals under the influence of weak magnetic field / T. P. Vladimirova, Ye. M. Kyslovs`kyy, V. B. Molodkin, S. I. Olikhovskii,O. V. Koplak, E. V. Kochelab // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 4. — С. 470-477. — Бібліогр.: 27 назв. — англ.
1560-8034
PACS 61.72.Dd
https://nasplib.isofts.kiev.ua/handle/123456789/117799
Quantitative characterization of complex microdefect structures in annealed silicon crystals (1150 °С, 40 h) and their transformations after exposing for one day in a weak magnetic field (1 T) has been performed by analyzing the rocking curves, which have been measured by a high-resolution double-crystal X-ray diffractometer. Based on the characterization results, which have been obtained by using the formulas of the dynamical theory of X-ray diffraction by imperfect crystals with randomly distributed microdefects of several types, the concentrations and average sizes of oxygen precipitates and dislocation loops after imposing the magnetic field and their dependences on time after its removing have been determined.
This work was performed with the financial support of the National Academy of Sciences of Ukraine (Contract No. 3.6.3.13-7/10-D ).
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Transformations of microdefect structure in silicon crystals under the influence of weak magnetic field
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Transformations of microdefect structure in silicon crystals under the influence of weak magnetic field
spellingShingle Transformations of microdefect structure in silicon crystals under the influence of weak magnetic field
Vladimirova, T.P.
Kyslovs’kyy, Ye.M.
Molodkin, V.B.
Olikhovskii, S.I.
Koplak, O.V.
Kochelab, E.V.
title_short Transformations of microdefect structure in silicon crystals under the influence of weak magnetic field
title_full Transformations of microdefect structure in silicon crystals under the influence of weak magnetic field
title_fullStr Transformations of microdefect structure in silicon crystals under the influence of weak magnetic field
title_full_unstemmed Transformations of microdefect structure in silicon crystals under the influence of weak magnetic field
title_sort transformations of microdefect structure in silicon crystals under the influence of weak magnetic field
author Vladimirova, T.P.
Kyslovs’kyy, Ye.M.
Molodkin, V.B.
Olikhovskii, S.I.
Koplak, O.V.
Kochelab, E.V.
author_facet Vladimirova, T.P.
Kyslovs’kyy, Ye.M.
Molodkin, V.B.
Olikhovskii, S.I.
Koplak, O.V.
Kochelab, E.V.
publishDate 2011
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description Quantitative characterization of complex microdefect structures in annealed silicon crystals (1150 °С, 40 h) and their transformations after exposing for one day in a weak magnetic field (1 T) has been performed by analyzing the rocking curves, which have been measured by a high-resolution double-crystal X-ray diffractometer. Based on the characterization results, which have been obtained by using the formulas of the dynamical theory of X-ray diffraction by imperfect crystals with randomly distributed microdefects of several types, the concentrations and average sizes of oxygen precipitates and dislocation loops after imposing the magnetic field and their dependences on time after its removing have been determined.
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/117799
citation_txt Transformations of microdefect structure in silicon crystals under the influence of weak magnetic field / T. P. Vladimirova, Ye. M. Kyslovs`kyy, V. B. Molodkin, S. I. Olikhovskii,O. V. Koplak, E. V. Kochelab // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 4. — С. 470-477. — Бібліогр.: 27 назв. — англ.
work_keys_str_mv AT vladimirovatp transformationsofmicrodefectstructureinsiliconcrystalsundertheinfluenceofweakmagneticfield
AT kyslovskyyyem transformationsofmicrodefectstructureinsiliconcrystalsundertheinfluenceofweakmagneticfield
AT molodkinvb transformationsofmicrodefectstructureinsiliconcrystalsundertheinfluenceofweakmagneticfield
AT olikhovskiisi transformationsofmicrodefectstructureinsiliconcrystalsundertheinfluenceofweakmagneticfield
AT koplakov transformationsofmicrodefectstructureinsiliconcrystalsundertheinfluenceofweakmagneticfield
AT kochelabev transformationsofmicrodefectstructureinsiliconcrystalsundertheinfluenceofweakmagneticfield
first_indexed 2025-12-07T20:21:38Z
last_indexed 2025-12-07T20:21:38Z
_version_ 1850882285627244544