Transformations of microdefect structure in silicon crystals under the influence of weak magnetic field
Quantitative characterization of complex microdefect structures in annealed
 silicon crystals (1150 °С, 40 h) and their transformations after exposing for one day in a
 weak magnetic field (1 T) has been performed by analyzing the rocking curves, which
 have been measured by...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2011 |
| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | Englisch |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2011
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/117799 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Transformations of microdefect structure in silicon crystals under the influence of weak magnetic field / T. P. Vladimirova, Ye. M. Kyslovs`kyy, V. B. Molodkin, S. I. Olikhovskii,O. V. Koplak, E. V. Kochelab // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 4. — С. 470-477. — Бібліогр.: 27 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862741890483355648 |
|---|---|
| author | Vladimirova, T.P. Kyslovs’kyy, Ye.M. Molodkin, V.B. Olikhovskii, S.I. Koplak, O.V. Kochelab, E.V. |
| author_facet | Vladimirova, T.P. Kyslovs’kyy, Ye.M. Molodkin, V.B. Olikhovskii, S.I. Koplak, O.V. Kochelab, E.V. |
| citation_txt | Transformations of microdefect structure in silicon crystals under the influence of weak magnetic field / T. P. Vladimirova, Ye. M. Kyslovs`kyy, V. B. Molodkin, S. I. Olikhovskii,O. V. Koplak, E. V. Kochelab // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 4. — С. 470-477. — Бібліогр.: 27 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Quantitative characterization of complex microdefect structures in annealed
silicon crystals (1150 °С, 40 h) and their transformations after exposing for one day in a
weak magnetic field (1 T) has been performed by analyzing the rocking curves, which
have been measured by a high-resolution double-crystal X-ray diffractometer. Based on
the characterization results, which have been obtained by using the formulas of the
dynamical theory of X-ray diffraction by imperfect crystals with randomly distributed
microdefects of several types, the concentrations and average sizes of oxygen precipitates
and dislocation loops after imposing the magnetic field and their dependences on time
after its removing have been determined.
|
| first_indexed | 2025-12-07T20:21:38Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-117799 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T20:21:38Z |
| publishDate | 2011 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Vladimirova, T.P. Kyslovs’kyy, Ye.M. Molodkin, V.B. Olikhovskii, S.I. Koplak, O.V. Kochelab, E.V. 2017-05-26T17:50:14Z 2017-05-26T17:50:14Z 2011 Transformations of microdefect structure in silicon crystals under the influence of weak magnetic field / T. P. Vladimirova, Ye. M. Kyslovs`kyy, V. B. Molodkin, S. I. Olikhovskii,O. V. Koplak, E. V. Kochelab // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 4. — С. 470-477. — Бібліогр.: 27 назв. — англ. 1560-8034 PACS 61.72.Dd https://nasplib.isofts.kiev.ua/handle/123456789/117799 Quantitative characterization of complex microdefect structures in annealed
 silicon crystals (1150 °С, 40 h) and their transformations after exposing for one day in a
 weak magnetic field (1 T) has been performed by analyzing the rocking curves, which
 have been measured by a high-resolution double-crystal X-ray diffractometer. Based on
 the characterization results, which have been obtained by using the formulas of the
 dynamical theory of X-ray diffraction by imperfect crystals with randomly distributed
 microdefects of several types, the concentrations and average sizes of oxygen precipitates
 and dislocation loops after imposing the magnetic field and their dependences on time
 after its removing have been determined. This work was performed with the financial
 support of the National Academy of Sciences of Ukraine
 (Contract No. 3.6.3.13-7/10-D ). en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Transformations of microdefect structure in silicon crystals under the influence of weak magnetic field Article published earlier |
| spellingShingle | Transformations of microdefect structure in silicon crystals under the influence of weak magnetic field Vladimirova, T.P. Kyslovs’kyy, Ye.M. Molodkin, V.B. Olikhovskii, S.I. Koplak, O.V. Kochelab, E.V. |
| title | Transformations of microdefect structure in silicon crystals under the influence of weak magnetic field |
| title_full | Transformations of microdefect structure in silicon crystals under the influence of weak magnetic field |
| title_fullStr | Transformations of microdefect structure in silicon crystals under the influence of weak magnetic field |
| title_full_unstemmed | Transformations of microdefect structure in silicon crystals under the influence of weak magnetic field |
| title_short | Transformations of microdefect structure in silicon crystals under the influence of weak magnetic field |
| title_sort | transformations of microdefect structure in silicon crystals under the influence of weak magnetic field |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/117799 |
| work_keys_str_mv | AT vladimirovatp transformationsofmicrodefectstructureinsiliconcrystalsundertheinfluenceofweakmagneticfield AT kyslovskyyyem transformationsofmicrodefectstructureinsiliconcrystalsundertheinfluenceofweakmagneticfield AT molodkinvb transformationsofmicrodefectstructureinsiliconcrystalsundertheinfluenceofweakmagneticfield AT olikhovskiisi transformationsofmicrodefectstructureinsiliconcrystalsundertheinfluenceofweakmagneticfield AT koplakov transformationsofmicrodefectstructureinsiliconcrystalsundertheinfluenceofweakmagneticfield AT kochelabev transformationsofmicrodefectstructureinsiliconcrystalsundertheinfluenceofweakmagneticfield |