Transformations of microdefect structure in silicon crystals under the influence of weak magnetic field

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2011
• Main Authors: Vladimirova, T.P., Kyslovs’kyy, Ye.M., Molodkin, V.B., Olikhovskii, S.I., Koplak, O.V., Kochelab, E.V.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2011
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/117799
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Transformations of microdefect structure in silicon crystals under the influence of weak magnetic field / T. P. Vladimirova, Ye. M. Kyslovs`kyy, V. B. Molodkin, S. I. Olikhovskii,O. V. Koplak, E. V. Kochelab // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 4. — С. 470-477. — Бібліогр.: 27 назв. — англ.

Quantitative characterization of complex microdefect structures in annealed
 silicon crystals (1150 °С, 40 h) and their transformations after exposing for one day in a
 weak magnetic field (1 T) has been performed by analyzing the rocking curves, which
 have been measured by...