Modelling the temperature conditions in three-dimensional piecewise homogeneous elements for microelectronic devices
The steady-state linear thermal conductivity problem for an isotropic layer with a thin foreign parallelepipedic inclusion that releases heat has been considered with account of heat dissipation. The methodology for analytic solution of three-dimensional steady-state boundary thermal conductivity...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2011 |
| 1. Verfasser: | |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2011
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/117800 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Modelling the temperature conditions in three-dimensional piecewise homogeneous elements for microelectronic devices / V.I. Gavrysh // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 4. — С. 478-481. — Бібліогр.: 7 назв. — англ. |