Modelling the temperature conditions in three-dimensional piecewise homogeneous elements for microelectronic devices
The steady-state linear thermal conductivity problem for an isotropic layer with a thin foreign parallelepipedic inclusion that releases heat has been considered with account of heat dissipation. The methodology for analytic solution of three-dimensional steady-state boundary thermal conductivity...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 2011 |
| Автор: | |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2011
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/117800 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Modelling the temperature conditions in three-dimensional piecewise homogeneous elements for microelectronic devices / V.I. Gavrysh // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 4. — С. 478-481. — Бібліогр.: 7 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-117800 |
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dspace |
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Gavrysh, V.I. 2017-05-26T17:50:49Z 2017-05-26T17:50:49Z 2011 Modelling the temperature conditions in three-dimensional piecewise homogeneous elements for microelectronic devices / V.I. Gavrysh // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 4. — С. 478-481. — Бібліогр.: 7 назв. — англ. 1560-8034 PACS 74.25.fc https://nasplib.isofts.kiev.ua/handle/123456789/117800 The steady-state linear thermal conductivity problem for an isotropic layer with a thin foreign parallelepipedic inclusion that releases heat has been considered with account of heat dissipation. The methodology for analytic solution of three-dimensional steady-state boundary thermal conductivity problem has been suggested. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Modelling the temperature conditions in three-dimensional piecewise homogeneous elements for microelectronic devices Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Modelling the temperature conditions in three-dimensional piecewise homogeneous elements for microelectronic devices |
| spellingShingle |
Modelling the temperature conditions in three-dimensional piecewise homogeneous elements for microelectronic devices Gavrysh, V.I. |
| title_short |
Modelling the temperature conditions in three-dimensional piecewise homogeneous elements for microelectronic devices |
| title_full |
Modelling the temperature conditions in three-dimensional piecewise homogeneous elements for microelectronic devices |
| title_fullStr |
Modelling the temperature conditions in three-dimensional piecewise homogeneous elements for microelectronic devices |
| title_full_unstemmed |
Modelling the temperature conditions in three-dimensional piecewise homogeneous elements for microelectronic devices |
| title_sort |
modelling the temperature conditions in three-dimensional piecewise homogeneous elements for microelectronic devices |
| author |
Gavrysh, V.I. |
| author_facet |
Gavrysh, V.I. |
| publishDate |
2011 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
The steady-state linear thermal conductivity problem for an isotropic layer
with a thin foreign parallelepipedic inclusion that releases heat has been considered with
account of heat dissipation. The methodology for analytic solution of three-dimensional
steady-state boundary thermal conductivity problem has been suggested.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/117800 |
| citation_txt |
Modelling the temperature conditions in three-dimensional piecewise homogeneous elements for microelectronic devices / V.I. Gavrysh // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 4. — С. 478-481. — Бібліогр.: 7 назв. — англ. |
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2025-12-01T14:44:56Z |
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2025-12-01T14:44:56Z |
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1850860462942453760 |