Modelling the temperature conditions in three-dimensional piecewise homogeneous elements for microelectronic devices

The steady-state linear thermal conductivity problem for an isotropic layer with a thin foreign parallelepipedic inclusion that releases heat has been considered with account of heat dissipation. The methodology for analytic solution of three-dimensional steady-state boundary thermal conductivity...

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Опубліковано в: :Semiconductor Physics Quantum Electronics & Optoelectronics
Дата:2011
Автор: Gavrysh, V.I.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2011
Онлайн доступ:https://nasplib.isofts.kiev.ua/handle/123456789/117800
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Modelling the temperature conditions in three-dimensional piecewise homogeneous elements for microelectronic devices / V.I. Gavrysh // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 4. — С. 478-481. — Бібліогр.: 7 назв. — англ.

Репозитарії

Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-117800
record_format dspace
spelling Gavrysh, V.I.
2017-05-26T17:50:49Z
2017-05-26T17:50:49Z
2011
Modelling the temperature conditions in three-dimensional piecewise homogeneous elements for microelectronic devices / V.I. Gavrysh // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 4. — С. 478-481. — Бібліогр.: 7 назв. — англ.
1560-8034
PACS 74.25.fc
https://nasplib.isofts.kiev.ua/handle/123456789/117800
The steady-state linear thermal conductivity problem for an isotropic layer with a thin foreign parallelepipedic inclusion that releases heat has been considered with account of heat dissipation. The methodology for analytic solution of three-dimensional steady-state boundary thermal conductivity problem has been suggested.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Modelling the temperature conditions in three-dimensional piecewise homogeneous elements for microelectronic devices
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Modelling the temperature conditions in three-dimensional piecewise homogeneous elements for microelectronic devices
spellingShingle Modelling the temperature conditions in three-dimensional piecewise homogeneous elements for microelectronic devices
Gavrysh, V.I.
title_short Modelling the temperature conditions in three-dimensional piecewise homogeneous elements for microelectronic devices
title_full Modelling the temperature conditions in three-dimensional piecewise homogeneous elements for microelectronic devices
title_fullStr Modelling the temperature conditions in three-dimensional piecewise homogeneous elements for microelectronic devices
title_full_unstemmed Modelling the temperature conditions in three-dimensional piecewise homogeneous elements for microelectronic devices
title_sort modelling the temperature conditions in three-dimensional piecewise homogeneous elements for microelectronic devices
author Gavrysh, V.I.
author_facet Gavrysh, V.I.
publishDate 2011
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description The steady-state linear thermal conductivity problem for an isotropic layer with a thin foreign parallelepipedic inclusion that releases heat has been considered with account of heat dissipation. The methodology for analytic solution of three-dimensional steady-state boundary thermal conductivity problem has been suggested.
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/117800
citation_txt Modelling the temperature conditions in three-dimensional piecewise homogeneous elements for microelectronic devices / V.I. Gavrysh // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 4. — С. 478-481. — Бібліогр.: 7 назв. — англ.
work_keys_str_mv AT gavryshvi modellingthetemperatureconditionsinthreedimensionalpiecewisehomogeneouselementsformicroelectronicdevices
first_indexed 2025-12-01T14:44:56Z
last_indexed 2025-12-01T14:44:56Z
_version_ 1850860462942453760