Modelling the temperature conditions in three-dimensional piecewise homogeneous elements for microelectronic devices

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2011
• Main Author: Gavrysh, V.I.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2011
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/117800
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Modelling the temperature conditions in three-dimensional piecewise homogeneous elements for microelectronic devices / V.I. Gavrysh // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 4. — С. 478-481. — Бібліогр.: 7 назв. — англ.

The steady-state linear thermal conductivity problem for an isotropic layer with a thin foreign parallelepipedic inclusion that releases heat has been considered with account of heat dissipation. The methodology for analytic solution of three-dimensional steady-state boundary thermal conductivity...