Partial dielectric behavior of the Mo electron spectrum as an effect of Van Hove singularities
The investigation shows that the specific conductivity of Mo sharply decreases
 exponentially under the temperature influence within the range from ~20 to ~60 K or
 under the Re impurity influence in the concentration range up to 3 4 at.% and then
 transforms into the po...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2011 |
| 1. Verfasser: | |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2011
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/117801 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Partial dielectric behavior of the Mo electron spectrum as an effect of Van Hove singularities / Т.А. Ignatyeva // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 4. — С. 482-488. — Бібліогр.: 19 назв. — англ. |