Partial dielectric behavior of the Mo electron spectrum as an effect of Van Hove singularities

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2011
• 1. Verfasser: Ignatyeva, Т.А.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2011
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/117801
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Partial dielectric behavior of the Mo electron spectrum as an effect of Van Hove singularities / Т.А. Ignatyeva // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 4. — С. 482-488. — Бібліогр.: 19 назв. — англ.

The investigation shows that the specific conductivity of Mo sharply decreases
 exponentially under the temperature influence within the range from ~20 to ~60 K or
 under the Re impurity influence in the concentration range up to 3  4 at.% and then
 transforms into the power dependence. Noted there are two singularities in the Mo
 specific conductivity, namely, an exponential conductivity change within the small
 energy range and the presence of a threshold energy value equivalent to ~50 K, which
 can be related to the mobility edge for localized electron states at the spectrum edge in
 the vicinity of the critical energy C1 (arising of a small-size electron lens). The identity
 in the behavior of Mo specific conductivity change, independently on the external
 parameter influencing on the Fermi level position relatively to the critical points of the
 electron spectrum, is shown. This fact permits to assume that the singularities under
 consideration can be related to the partial dielectric behavior of the electron spectrum,
 depending on the Fermi level position relatively to the critical energies