Partial dielectric behavior of the Mo electron spectrum as an effect of Van Hove singularities
The investigation shows that the specific conductivity of Mo sharply decreases
 exponentially under the temperature influence within the range from ~20 to ~60 K or
 under the Re impurity influence in the concentration range up to 3 4 at.% and then
 transforms into the po...
Збережено в:
| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 2011 |
| Автор: | |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2011
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/117801 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Partial dielectric behavior of the Mo electron spectrum as an effect of Van Hove singularities / Т.А. Ignatyeva // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 4. — С. 482-488. — Бібліогр.: 19 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862550225707597824 |
|---|---|
| author | Ignatyeva, Т.А. |
| author_facet | Ignatyeva, Т.А. |
| citation_txt | Partial dielectric behavior of the Mo electron spectrum as an effect of Van Hove singularities / Т.А. Ignatyeva // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 4. — С. 482-488. — Бібліогр.: 19 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The investigation shows that the specific conductivity of Mo sharply decreases
exponentially under the temperature influence within the range from ~20 to ~60 K or
under the Re impurity influence in the concentration range up to 3 4 at.% and then
transforms into the power dependence. Noted there are two singularities in the Mo
specific conductivity, namely, an exponential conductivity change within the small
energy range and the presence of a threshold energy value equivalent to ~50 K, which
can be related to the mobility edge for localized electron states at the spectrum edge in
the vicinity of the critical energy C1 (arising of a small-size electron lens). The identity
in the behavior of Mo specific conductivity change, independently on the external
parameter influencing on the Fermi level position relatively to the critical points of the
electron spectrum, is shown. This fact permits to assume that the singularities under
consideration can be related to the partial dielectric behavior of the electron spectrum,
depending on the Fermi level position relatively to the critical energies
|
| first_indexed | 2025-11-25T20:43:29Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-117801 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-25T20:43:29Z |
| publishDate | 2011 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Ignatyeva, Т.А. 2017-05-26T17:51:33Z 2017-05-26T17:51:33Z 2011 Partial dielectric behavior of the Mo electron spectrum as an effect of Van Hove singularities / Т.А. Ignatyeva // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 4. — С. 482-488. — Бібліогр.: 19 назв. — англ. 1560-8034 PACS 71.20.-b, 71.23.-k, 73.20.-r https://nasplib.isofts.kiev.ua/handle/123456789/117801 The investigation shows that the specific conductivity of Mo sharply decreases
 exponentially under the temperature influence within the range from ~20 to ~60 K or
 under the Re impurity influence in the concentration range up to 3 4 at.% and then
 transforms into the power dependence. Noted there are two singularities in the Mo
 specific conductivity, namely, an exponential conductivity change within the small
 energy range and the presence of a threshold energy value equivalent to ~50 K, which
 can be related to the mobility edge for localized electron states at the spectrum edge in
 the vicinity of the critical energy C1 (arising of a small-size electron lens). The identity
 in the behavior of Mo specific conductivity change, independently on the external
 parameter influencing on the Fermi level position relatively to the critical points of the
 electron spectrum, is shown. This fact permits to assume that the singularities under
 consideration can be related to the partial dielectric behavior of the electron spectrum,
 depending on the Fermi level position relatively to the critical energies en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Partial dielectric behavior of the Mo electron spectrum as an effect of Van Hove singularities Article published earlier |
| spellingShingle | Partial dielectric behavior of the Mo electron spectrum as an effect of Van Hove singularities Ignatyeva, Т.А. |
| title | Partial dielectric behavior of the Mo electron spectrum as an effect of Van Hove singularities |
| title_full | Partial dielectric behavior of the Mo electron spectrum as an effect of Van Hove singularities |
| title_fullStr | Partial dielectric behavior of the Mo electron spectrum as an effect of Van Hove singularities |
| title_full_unstemmed | Partial dielectric behavior of the Mo electron spectrum as an effect of Van Hove singularities |
| title_short | Partial dielectric behavior of the Mo electron spectrum as an effect of Van Hove singularities |
| title_sort | partial dielectric behavior of the mo electron spectrum as an effect of van hove singularities |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/117801 |
| work_keys_str_mv | AT ignatyevata partialdielectricbehaviorofthemoelectronspectrumasaneffectofvanhovesingularities |