Partial dielectric behavior of the Mo electron spectrum as an effect of Van Hove singularities
The investigation shows that the specific conductivity of Mo sharply decreases exponentially under the temperature influence within the range from ~20 to ~60 K or under the Re impurity influence in the concentration range up to 3 4 at.% and then transforms into the power dependence. Noted th...
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| Cite this: | Partial dielectric behavior of the Mo electron spectrum as an effect of Van Hove singularities / Т.А. Ignatyeva // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 4. — С. 482-488. — Бібліогр.: 19 назв. — англ. |
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Ignatyeva, Т.А. 2017-05-26T17:51:33Z 2017-05-26T17:51:33Z 2011 Partial dielectric behavior of the Mo electron spectrum as an effect of Van Hove singularities / Т.А. Ignatyeva // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 4. — С. 482-488. — Бібліогр.: 19 назв. — англ. 1560-8034 PACS 71.20.-b, 71.23.-k, 73.20.-r https://nasplib.isofts.kiev.ua/handle/123456789/117801 The investigation shows that the specific conductivity of Mo sharply decreases exponentially under the temperature influence within the range from ~20 to ~60 K or under the Re impurity influence in the concentration range up to 3 4 at.% and then transforms into the power dependence. Noted there are two singularities in the Mo specific conductivity, namely, an exponential conductivity change within the small energy range and the presence of a threshold energy value equivalent to ~50 K, which can be related to the mobility edge for localized electron states at the spectrum edge in the vicinity of the critical energy C1 (arising of a small-size electron lens). The identity in the behavior of Mo specific conductivity change, independently on the external parameter influencing on the Fermi level position relatively to the critical points of the electron spectrum, is shown. This fact permits to assume that the singularities under consideration can be related to the partial dielectric behavior of the electron spectrum, depending on the Fermi level position relatively to the critical energies en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Partial dielectric behavior of the Mo electron spectrum as an effect of Van Hove singularities Article published earlier |
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Partial dielectric behavior of the Mo electron spectrum as an effect of Van Hove singularities |
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Partial dielectric behavior of the Mo electron spectrum as an effect of Van Hove singularities Ignatyeva, Т.А. |
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Partial dielectric behavior of the Mo electron spectrum as an effect of Van Hove singularities |
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Partial dielectric behavior of the Mo electron spectrum as an effect of Van Hove singularities |
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Partial dielectric behavior of the Mo electron spectrum as an effect of Van Hove singularities |
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partial dielectric behavior of the mo electron spectrum as an effect of van hove singularities |
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Semiconductor Physics Quantum Electronics & Optoelectronics |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
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The investigation shows that the specific conductivity of Mo sharply decreases
exponentially under the temperature influence within the range from ~20 to ~60 K or
under the Re impurity influence in the concentration range up to 3 4 at.% and then
transforms into the power dependence. Noted there are two singularities in the Mo
specific conductivity, namely, an exponential conductivity change within the small
energy range and the presence of a threshold energy value equivalent to ~50 K, which
can be related to the mobility edge for localized electron states at the spectrum edge in
the vicinity of the critical energy C1 (arising of a small-size electron lens). The identity
in the behavior of Mo specific conductivity change, independently on the external
parameter influencing on the Fermi level position relatively to the critical points of the
electron spectrum, is shown. This fact permits to assume that the singularities under
consideration can be related to the partial dielectric behavior of the electron spectrum,
depending on the Fermi level position relatively to the critical energies
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/117801 |
| citation_txt |
Partial dielectric behavior of the Mo electron spectrum as an effect of Van Hove singularities / Т.А. Ignatyeva // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 4. — С. 482-488. — Бібліогр.: 19 назв. — англ. |
| work_keys_str_mv |
AT ignatyevata partialdielectricbehaviorofthemoelectronspectrumasaneffectofvanhovesingularities |
| first_indexed |
2025-11-25T20:43:29Z |
| last_indexed |
2025-11-25T20:43:29Z |
| _version_ |
1850530818040004608 |
| fulltext |
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2011. V. 14, N 4. P. 482-488.
© 2011, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
482
PACS 71.20.-b, 71.23.-k, 73.20.-r
Partial dielectric behavior of the Mo electron spectrum
as an effect of Van Hove singularities
Т.А. Ignatyeva
National Science Center “Kharkiv Institute of Physics and Technology”,
1, Academichna str., 61108 Kharkiv, Ukraine
E-mail: taignatieva@mail.ru
Abstract. The investigation shows that the specific conductivity of Mo sharply decreases
exponentially under the temperature influence within the range from ~20 to ~60 K or
under the Re impurity influence in the concentration range up to 43 at.% and then
transforms into the power dependence. Noted there are two singularities in the Mo
specific conductivity, namely, an exponential conductivity change within the small
energy range and the presence of a threshold energy value equivalent to ~50 K, which
can be related to the mobility edge for localized electron states at the spectrum edge in
the vicinity of the critical energy 1C (arising of a small-size electron lens). The identity
in the behavior of Mo specific conductivity change, independently on the external
parameter influencing on the Fermi level position relatively to the critical points of the
electron spectrum, is shown. This fact permits to assume that the singularities under
consideration can be related to the partial dielectric behavior of the electron spectrum,
depending on the Fermi level position relatively to the critical energies
Keywords: electron spectrum, dielectric behavior, critical energies, specific
conductivity, spectrum edge, localized states, electron state density.
Manuscript received 25.06.11; revised manuscript received 30.08.11;
accepted for publication 14.09.11; published online 30.11.11.
1. Introduction
As own from literature, the Van Hove singularities [1]
lead to the electron topological transitions (ETT) [2, 3]
under conditions of the external action on the position of
Fermi level F relatively to these singularities C
[ 74 ]. In the case of electron topological transitions of
a 2.5 kind, the singularities arise in the electron states
density ~ FC (for free electrons).
Moreover, a characteristic singularity is the change in
the electron motion dynamics, when the Fermi level
traverses the critical point of the electron spectrum.
The present paper considers ETT caused by the
small-size electron group arising, when the Fermi level
traverses the bottom of a band, not occupied before, then
the electron velocity reduces to zero and the effective
mass is increasing. At the same time, it is known that
when the Fermi level traverses the zone bottom, the
states of electrons at the spectrum edge are localized
with the characteristic signs of metal-dielectric transition
[8], namely, the appearance of δ-like peaks in the
electron state density, corresponding to the quasi-
discrete spectrum to some mobility threshold, during
electron delocalization.
The metal-dielectric transitions were considered for
the most part for semiconductors. In the case of electron
topological transitions in metals (appearance of a small-
size electron group) there are, simultaneously, signs of
two types of transitions with characteristic singularities
in the electron state densities for the ETT and the metal-
dielectric transition.
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2011. V. 14, N 4. P. 482-488.
© 2011, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
483
Simultaneously with the singularity
~ FC for free electrons, there arising are δ-like
peaks of the electron state density at the spectrum edge
inherent to the localized electron states. Singularities in
the electron motion dynamics during such electron
transitions lead to new mechanisms of charge transfer
with participation of phonons, i.e., to the umklapp
processes [9-11] and to additional mechanisms in the
scattering processes.
So, under the condition 0F C the
singularities arise in the electron state densities, being
inherent to two types of transitions, namely, ETT and
metal-dielectric transition. Before fulfilling this
condition, the Fermi level changes its position relatively
to the critical energy that results in the change of the
energy gap under the external actions. It should lead to
the exponential dependence of the specific resistance,
characteristic for the metal-dielectric transition, on the
activation energy and the gap size ∆ε, in this case it is
the gap between the Fermi level and the critical electron
energy.
Note that both of transitions have a common
nature. In both cases, the Fermi level passes through the
spectrum edge (zone bottom). This fact allows us to
conclude that the electron-topological transition in
metals should be accompanied by the metal-dielectric
transition in the direction relatively to the Brillouin
zone, where there is a narrow gap between the Fermi
level F and the critical point of electron spectrum C
(Brillouin zone boundary).
Under the external actions (pressure, impurity,
temperature), one can create conditions for realization of
two interrelated electron transitions having the features
of partial dielectric behavior of the electron spectrum in
the direction where the ETT occurs.
For the first time, two types of singularities in the
electron state densities have been found by studying the
ETT under external actions in the ReMo alloys
[ 75 ]. The dependences of the superconducting
transition temperature TC under pressure were measured
with a high sensitivity K10 3 [5, 6]. The thermal
e.m.f. α(T) for different concentrations of ReMo
alloys within the temperature range from 0 to 10 K were
measured with the sensitivity V10 13 [7].
Due to the high sensitivity of measurements for the
TC(P) and TT
dependences within the temperature
range from 0 to 10 K in the ReMo alloys,
simultaneously with a smooth nonlinearity
corresponding to the ETT singularity ~ FC ,
the “oscillations” having low amplitudes were observed.
These “oscillations” were assumed to be related with the
Fermi level transition through the local levels of the
quasi-discrete spectrum at the edge of a new zone 2C ,
corresponding to the appearance of a new Fermi surface
cavity with 10 at% Re [12]. The ETT in these alloys was
determined as an extreme of derivatives of the
investigated characteristics by the external parameter
(pressure, impurity, temperature), being changing the
gap FC .
Later the attention was given to the fact that
singularities in the temperature dependence of the
specific resistance of pure Mo also can be considered as
appearance of quasi-local levels of the electron spectra
due to the closeness of F to the critical point 1C
below the Fermi level belonging in Mo to the small-size
electron lens [13]. In this case, the temperature is
considered as a parameter exerting the influence on the
Fermi level position relatively to the critical energy 1C .
This paper presents the consideration on a
macroscopic sharp decrease of the Mo specific
conductivity (by the exponent) in the dependence 1/ρ(Т)
within the narrow temperature range from ~20 up to
~60 K and in the dependence 1/ρ(С) within the range of
rhenium impurity concentrations to ~ 43 at.% at 10 K.
A comparison is made between the experimental
results [14-16] on singularities in the temperature and
concentration dependences of the specific conductivity
for Mo, which can be related to the partial dielectric
behavior of the Mo electron spectrum due to the
closeness 1C of the small-size electron lens in Mo to
the Fermi level.
2. Experimental results
The present paper gives the results of experimental
investigations [14-16] on the temperature dependence of
the specific resistance ρ(Т) and specific conductivity
1/ρ(T) in a wide temperature range for Mo with the
residual resistance 4
3002.4 105.4/ RR , as well as the
concentration dependence ρ(C) and 1/ρ(С) of ReMo
alloys within the solid solution at 10 K.
Making the samples and measurement techniques
are described in [6, 7], where the results have been
considered only with account of the singularity 1C in
the Mo electron spectrum above the Fermi level that
leads to the electron-topological transition under the Re
impurity influence, i.e. to the formation of a new Fermi
surface cavity when the Rе concentration reaches
~10 at.%.
In this paper, we pay attention to other singularities
in the specific resistance of Mo related with the presence
of a critical point in the Мо electron spectrum below the
Fermi level 1C , belonging to the available small-size
electron lens. When the Fermi level moves in the narrow
range of energies FC , one can observe singularities
in the specific resistance of Mo depending on the Fermi
level position relatively to 1C The data presented
consider the Fermi level position being varied by the
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2011. V. 14, N 4. P. 482-488.
© 2011, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
484
Fig. 1. а) Mo specific resistance (linear 1 and logarithmic 3
scales) and the derivative versus temperature (2) for Mo;
b) Mo specific conductivity versus the temperature within
the range from 1.5 to 300 K. The inserts 1, 2, and 3 show
different temperature ranges.
temperature for Mo above 20 K and or by the Re
impurity at a constant temperature of 10 K.
The experimental results on the dependences of
changes in the specific resistance and conductivity of
Mo under the temperature influence in the wide
temperature range and under the Re impurity influence
for ReMo alloys in the region of solid solution are
given in Figs. 1a,b and 2 a,b, respectively.
The results presented in Fig. 1a demonstrate two
characteristic singularities which manifest themselves in
the temperature derivatives of specific resistance in the
form of extremes within the temperature ranges from 20
to 30 K and from 150 to 200 K (Fig. 1a, curve 2). These
singularities are related with electron transitions in Mo
caused by the temperature change (see details in [13]).
Fig. 1b shows the specific conductivity of Mo as a
function of temperature within the range 1.5–300 K, and
the inserts in Fig. 1b show the specific conductivity of
Mo as a function of temperature in different temperature
ranges. Here, attention should be given to the change in
the functional dependence 1/ρ(Т), i.e. the transition from
the exponential dependence describing the sharp change
of the conductivity to the power dependence during
further temperature increase.
Fig. 2a, b shows the Re impurity influence on the
specific resistance (Fig. 2a) and on the specific
conductivity (Fig. 2b). Here, also the exponential
dependence variation 1/ρ(С) in the concentration range
to 3–4 at.% Re changes to the power dependence
variation during further concentration increase.
From the above-mentioned results, one can see that
the changes in the specific resistance and the specific
conductivity are identical as the Fermi level rises, and no
difference which of external parameters influences on
the Fermi level position (in our case, temperature or
impurity). The distinction is a sharp exponential
decrease of the conductivity for pure Mo within the
narrow temperature range from 30 to 60 K and within
the narrow concentration range, for ReMo alloys to
43 at.% at 10 K.
3. Discussion on results
To analyze the results obtained, let us reduce them to the
single parameters, namely, the relative change of the
electron state density
0
under the temperature and
impurity concentration influence on the electron
spectrum structure.
From the data presented, this value is obtained
using the following way
0 ~
0
1
–
0
1
~ 00
,
0
0
, (1)
where ρ0 and ν0 do not depend on the changes in the
electron spectrum and are determined by the initial state
of the sample, ρ is the specific resistance at different
temperatures and composition of the sample with the
electron state density (ν0+δν), where δν0 is the addition
to the electron state density depending on the external
parameter influence and on the electron transition nature.
In the paper [13], one considers the
dependence /0 as a function at Mo, temperature
in the wide temperature range with a detailed discussion
of the changes in the Mo electron spectrum under the
influence of temperature in the different temperature
ranges.
In our paper, we compare the dependence
/0 of Mo as a function temperature exceeding
30 K with such dependence as a function of Re impurity
concentration in Mo. The choice of this temperature
range is determined by the following reasons: for
comparison of the influence of different external
parameters (impurity and temperature) on the Mo
electron spectrum, it is necessary to have an identity of
the Mo electron spectrum, beginning from which the
different external parameters (impurity and temperature),
rising the Fermi level, exert the influence on the further
change in the electron spectrum.
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2011. V. 14, N 4. P. 482-488.
© 2011, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
485
Fig. 2. а) Mo-Re specific resistance (in the linear and logarithmic scales) and the derivative versus the concentration;
b) Mo –Re specific conductivity versus the concentration within the range from 0 to 25 аt.%Re for Mo – Re. The inserts 1 and
2 show different concentration ranges.
Fig. 3. Dependences
0 of temperature function (1), of electron state density changes )(
0
T
(2), )(/
0
TdTd
(3, 4)
for Mo.
According to our notions [13], at temperatures
lower than 10 K the electron lens in Mo 1C vanishes,
due to the Fermi level lowering in the case of the lattice
expansion, and at T > 10 K it recovers within the
temperature range 20 to 30 K, when the smearing of kT
compensates the Fermi level drop, and the temperature
influence on the Fermi level position, during the further
temperature increase, reduces to the Fermi energy
displacement upwards.
In other words, we compare the behavior of the
specific conductivity under conditions that the Fermi
level moves upwards under the influence of different
parameters (temperature, Fig. 3, and impurity, Fig. 4,
beginning from the same starting conditions, by the
Fermi level position, relatively to the critical energies of
the Mo electron spectrum).
Figs. 3b and 3c represent the dependences T
0
and the temperature derivative of this value for Mo.
Figs. 4b and 4c present the dependences C
0
and the
concentration derivative of this value for ReMo .
Comparison of Figs. 3 and 4 shows the identity of
the changes in the electron state density when the Fermi
level rises independently on the choice of the external
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2011. V. 14, N 4. P. 482-488.
© 2011, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
486
Fig. 4. Dependences
0 of concentration function (1), of electron state density changes )(
0
C
(2), )(/
0
CdCd
(3, 4) for Mo – Re.
parameter displacing the Fermi level upwards: this is the
sharp change of the characteristics under consideration
within the temperature range from 30 to 60 K and in the
range of concentrations to ~ 43 at.% with a subsequent
slight changing during further increase either of the
temperature or the impurity concentration.
Let us compare these results with the fine structure
of the Mo electron spectrum [18] shown in Fig. 5.
One can see from the calculation of ε(κ) for Мо
that there are two gaps: 1F C from the zone bottom
in the direction ГН to the Fermi level that corresponds to
the small-size electron lens of Mo and F2 C in the
direction HN from the Fermi level to the empty zone
bottom. If the Fermi level changes, then ETT are
possible – the lens vanishes if F decreases, and the new
Fermi cavity take place if F reaches 2C .
In our case, the sharp change in the conductivity
under the influence of temperature or Re impurity is not
related with ETT at 2C .
When there is 10 at.% Re in Mo, the Fermi level
rises within the range from 30 to 60 K, and in ReMo
the concentration changes to 43 at.% the small-size
electron lens increases in the direction ГН of the
Brillouin zone and the gap F2 C decreases.
Fig. 5. Theoretical calculations of the Mo electron spectrum
[18]. εС1 is the electron lens nucleation; εС2 is the empty zone
bottom equivalent to the critical energy at which a new
electron group arises under the influence of ~10 аt.% Re.
One can see from the calculation of for Мо
that there are two gaps: 1F C from the zone bottom
in Mo the Fermi level rises within the range from 30 to
60 K, and in ReMo the concentration changes to
43 at.%, the small-size electron lens increases in the
direction ГН of the Brillouin zone and the gap F2 C
decreases.
Here, we should note two features in the electron
spectrum change: 1) electron localization in Mo at the
spectrum edge (for the lens it is equivalent to the zone
bottom 1C ) and 2) additional conditions for the electron
localization created by the Re addition (low
concentrations) [19]. In both cases, the Fermi level
moves in the energy gap F2 C and changes its value.
In Fig. 6, given in more details are the temperature
dependences of the characteristics under study for Mo at
a temperature higher than 20 K. It is seen that after the
sharp increase of T
0
, the decrease takes place
within the range 30 to 60 K.
The temperature derivatives in the range higher
than 30 K are depicted in Fig. 7а, and the concentration
derivatives up to 43 at.% are in Fig. 7b. Under the
temperature and impurity influence, these derivatives are
increased in the identical manner.
Thus, singularities of conductivity in pure Mo can
be related to the lens and the presence of localized
electrons at the spectrum edge (zone bottom), when
there is a nucleation (recovery) of the lens 1C at
~30 K. The influence of impurity and temperature on the
electron spectrum is in correspondence with the different
efficiency according to the rate of Fermi energy change
under the influence of these parameters. From the data of
[6, 7]
at.%
eV
1017 4F
С
C
СC
. Comparison of
T
~ eV/K10 4 and
C
shows that the influence of
1 at.% Re on F in Мо is equivalent to the temperature
of ~17 K. Then at a temperature from 30 to 60 K and
with the impurity concentration of 43 at.% Re, the
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2011. V. 14, N 4. P. 482-488.
© 2011, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
487
Fig. 6. The temperature dependence for Mo above 20 K: T
0
, )(
0
T
, )(/
0
TdTd
.
Fig. 7. a) The temperature derivative )(/
0
TdTd
above 30 K; b) the concentration derivative )(/
0
CdCd
.
Fermi level passes the same energy range to the
threshold value, when the conductivity character
changes from the exponential to the power one. It can be
explained by the presence of a mobility edge that is
characteristic for the metal-dielectric transition above
which electrons delocalize. Comparison of the impurity
and temperature influence on the change in the electron
state density also can be made using the experimental
data given below in Table.
C, % dCd /
0
T, K dTd /
0
0.5
3
4
6.5
–0.9968
–0.0008
–0.00112
20.8
24.1
27
30.8
34
39.8
45
51.2
58
0.20667
0.10333
–0.0079
–0.01924
–0.01308
–0.00452
–0.00448
–0.00228
–0.000869
The data shows that under the influence of
temperature near 50 K, which is equivalent to the
influence of 43 at.% Re, there occurs the electron
spectrum rearrangement not concerned to ETT but
related to the same critical points of the electron
spectrum, which causes the change in the Fermi surface
topology when 0F C .
So, it can be assumed that the temperature of ~50 K
is an equivalent of the mobility edge energy for electrons
localized at the spectrum edge or at the zone bottom.
4. Conclusions
1. In transition metals, besides a continuous electron
spectrum, a discrete spectrum can exist, which is
related with the electron localization due to the
presence of small cavities of the Fermi surface, for
which low-energy gaps between the Fermi energy
and the critical energy, where a small-size electron
group nucleates, are characteristic. The critical
energy is simultaneously a zone bottom or an
electron spectrum edge, where electrons are
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2011. V. 14, N 4. P. 482-488.
© 2011, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
488
localized. As the Fermi energy increases, the
number of localized states increases, too, up to the
mobility edge, i.e. to the energy at which electrons
are localized.
2. Our investigations show that in Mo, independently
of the choice of parameters exerting the influence
on the Fermi level position relatively to the electron
spectrum critical energy 2C in the direction ГН of
the Brillouin zone, the singularities in the specific
conductivity are identical. The specific
conductivity behavior depends only on the energy
range that the Fermi level passes from the critical
point to the mobility edge under influence of
external parameters (temperature or impurity).
3. The mobility edge in Mo equivalent by the energy
to ~50 K is determined. This temperature
corresponds to the sharp change in the specific
conductivity as a function of external parameters
changing the Fermi level position. In the case under
consideration, the matter concerns the partial
dielectric behavior of the electron spectrum that
leads to the exponential dependence of the Mo
specific conductivity on the narrow energy range
limited by the mobility threshold characteristic for
metal-dielectric transitions.
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/NLD (Gebruik deze instellingen om Adobe PDF-documenten te maken die zijn geoptimaliseerd voor prepress-afdrukken van hoge kwaliteit. De gemaakte PDF-documenten kunnen worden geopend met Acrobat en Adobe Reader 5.0 en hoger.)
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/ENU (Use these settings to create Adobe PDF documents best suited for high-quality prepress printing. Created PDF documents can be opened with Acrobat and Adobe Reader 5.0 and later.)
>>
/Namespace [
(Adobe)
(Common)
(1.0)
]
/OtherNamespaces [
<<
/AsReaderSpreads false
/CropImagesToFrames true
/ErrorControl /WarnAndContinue
/FlattenerIgnoreSpreadOverrides false
/IncludeGuidesGrids false
/IncludeNonPrinting false
/IncludeSlug false
/Namespace [
(Adobe)
(InDesign)
(4.0)
]
/OmitPlacedBitmaps false
/OmitPlacedEPS false
/OmitPlacedPDF false
/SimulateOverprint /Legacy
>>
<<
/AddBleedMarks false
/AddColorBars false
/AddCropMarks false
/AddPageInfo false
/AddRegMarks false
/ConvertColors /ConvertToCMYK
/DestinationProfileName ()
/DestinationProfileSelector /DocumentCMYK
/Downsample16BitImages true
/FlattenerPreset <<
/PresetSelector /MediumResolution
>>
/FormElements false
/GenerateStructure false
/IncludeBookmarks false
/IncludeHyperlinks false
/IncludeInteractive false
/IncludeLayers false
/IncludeProfiles false
/MultimediaHandling /UseObjectSettings
/Namespace [
(Adobe)
(CreativeSuite)
(2.0)
]
/PDFXOutputIntentProfileSelector /DocumentCMYK
/PreserveEditing true
/UntaggedCMYKHandling /LeaveUntagged
/UntaggedRGBHandling /UseDocumentProfile
/UseDocumentBleed false
>>
]
>> setdistillerparams
<<
/HWResolution [2400 2400]
/PageSize [612.000 792.000]
>> setpagedevice
|