Changes in the state of paramagnetic centers and lattice parameter of micro-structured Si under the influence of weak magnetic field
In this work, the influence of weak magnetic field on structure-dependent properties of micro-structured Si was determined. The researches of EPR-spectra inherent to micro-structured Si showed the presence of the spectral line at H ~ 3500 Oe that appears from centers with the g-factor g ~ 2.0010...
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| Date: | 2010 |
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| Main Authors: | , , , , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
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| Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/117805 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Changes in the state of paramagnetic centers and lattice parameter of micro-structured Si under the influence of weak magnetic field / V.V. Trachevsky, L.P. Steblenko, P.Y. Demchenko, O.V. Koplak, A.M. Kuryliuk, A.K. Melnik // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 87-90. — Бібліогр.: 17 назв. — англ. |