Changes in the state of paramagnetic centers and lattice parameter of micro-structured Si under the influence of weak magnetic field

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2010
• Main Authors: Trachevsky, V.V., Steblenko, L.P., Demchenko, P.Y., Koplak, O.V., Kuryliuk, A.M., Melnik, A.K.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2010
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/117805
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Changes in the state of paramagnetic centers and lattice parameter of micro-structured Si under the influence of weak magnetic field / V.V. Trachevsky, L.P. Steblenko, P.Y. Demchenko, O.V. Koplak, A.M. Kuryliuk, A.K. Melnik // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 87-90. — Бібліогр.: 17 назв. — англ.

In this work, the influence of weak magnetic field on structure-dependent properties of micro-structured Si was determined. The researches of EPR-spectra inherent to micro-structured Si showed the presence of the spectral line at H ~ 3500 Oe that appears from centers with the g-factor g ~ 2.0010 (Pв – centers). Intensity of the determined spectral line decreases twice after magnetic processing. The observed redox processes and evolution of defect structure are interpreted as the influence of magnetic field on micro-structured Si. Calculations made using the data of X-ray diffractometric researches showed an essential decrease of internal strains and respective increase of the lattice parameter in micro-structured Si samples after magnetic processing in the weak magnetic field.