Changes in the state of paramagnetic centers and lattice parameter of micro-structured Si under the influence of weak magnetic field

• Опубліковано в: : Semiconductor Physics Quantum Electronics & Optoelectronics
• Дата: 2010
• Автори: Trachevsky, V.V., Steblenko, L.P., Demchenko, P.Y., Koplak, O.V., Kuryliuk, A.M., Melnik, A.K.
• Формат: Стаття
• Мова: Англійська
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2010
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/117805
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Changes in the state of paramagnetic centers and lattice parameter
 of micro-structured Si under the influence of weak magnetic field / V.V. Trachevsky, L.P. Steblenko, P.Y. Demchenko, O.V. Koplak, A.M. Kuryliuk, A.K. Melnik // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 87-90. — Бібліогр.: 17 назв. — англ.

In this work, the influence of weak magnetic field on structure-dependent
 properties of micro-structured Si was determined. The researches of EPR-spectra
 inherent to micro-structured Si showed the presence of the spectral line at H ~ 3500 Oe
 that appears from centers with the g-factor g ~ 2.0010 (Pв – centers). Intensity of the
 determined spectral line decreases twice after magnetic processing. The observed redox
 processes and evolution of defect structure are interpreted as the influence of magnetic
 field on micro-structured Si. Calculations made using the data of X-ray diffractometric
 researches showed an essential decrease of internal strains and respective increase of the
 lattice parameter in micro-structured Si samples after magnetic processing in the weak
 magnetic field.