Changes in the state of paramagnetic centers and lattice parameter of micro-structured Si under the influence of weak magnetic field
In this work, the influence of weak magnetic field on structure-dependent properties of micro-structured Si was determined. The researches of EPR-spectra inherent to micro-structured Si showed the presence of the spectral line at H ~ 3500 Oe that appears from centers with the g-factor g ~ 2.0010...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2010 |
| Автори: | , , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/117805 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Changes in the state of paramagnetic centers and lattice parameter of micro-structured Si under the influence of weak magnetic field / V.V. Trachevsky, L.P. Steblenko, P.Y. Demchenko, O.V. Koplak, A.M. Kuryliuk, A.K. Melnik // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 87-90. — Бібліогр.: 17 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-117805 |
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dspace |
| spelling |
Trachevsky, V.V. Steblenko, L.P. Demchenko, P.Y. Koplak, O.V. Kuryliuk, A.M. Melnik, A.K. 2017-05-26T17:59:31Z 2017-05-26T17:59:31Z 2010 Changes in the state of paramagnetic centers and lattice parameter of micro-structured Si under the influence of weak magnetic field / V.V. Trachevsky, L.P. Steblenko, P.Y. Demchenko, O.V. Koplak, A.M. Kuryliuk, A.K. Melnik // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 87-90. — Бібліогр.: 17 назв. — англ. PACS 61.43.Dq, 61.72.Dd, 68.35.Dv, 76.30.Mi 1560-8034 https://nasplib.isofts.kiev.ua/handle/123456789/117805 In this work, the influence of weak magnetic field on structure-dependent properties of micro-structured Si was determined. The researches of EPR-spectra inherent to micro-structured Si showed the presence of the spectral line at H ~ 3500 Oe that appears from centers with the g-factor g ~ 2.0010 (Pв – centers). Intensity of the determined spectral line decreases twice after magnetic processing. The observed redox processes and evolution of defect structure are interpreted as the influence of magnetic field on micro-structured Si. Calculations made using the data of X-ray diffractometric researches showed an essential decrease of internal strains and respective increase of the lattice parameter in micro-structured Si samples after magnetic processing in the weak magnetic field. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Changes in the state of paramagnetic centers and lattice parameter of micro-structured Si under the influence of weak magnetic field Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Changes in the state of paramagnetic centers and lattice parameter of micro-structured Si under the influence of weak magnetic field |
| spellingShingle |
Changes in the state of paramagnetic centers and lattice parameter of micro-structured Si under the influence of weak magnetic field Trachevsky, V.V. Steblenko, L.P. Demchenko, P.Y. Koplak, O.V. Kuryliuk, A.M. Melnik, A.K. |
| title_short |
Changes in the state of paramagnetic centers and lattice parameter of micro-structured Si under the influence of weak magnetic field |
| title_full |
Changes in the state of paramagnetic centers and lattice parameter of micro-structured Si under the influence of weak magnetic field |
| title_fullStr |
Changes in the state of paramagnetic centers and lattice parameter of micro-structured Si under the influence of weak magnetic field |
| title_full_unstemmed |
Changes in the state of paramagnetic centers and lattice parameter of micro-structured Si under the influence of weak magnetic field |
| title_sort |
changes in the state of paramagnetic centers and lattice parameter of micro-structured si under the influence of weak magnetic field |
| author |
Trachevsky, V.V. Steblenko, L.P. Demchenko, P.Y. Koplak, O.V. Kuryliuk, A.M. Melnik, A.K. |
| author_facet |
Trachevsky, V.V. Steblenko, L.P. Demchenko, P.Y. Koplak, O.V. Kuryliuk, A.M. Melnik, A.K. |
| publishDate |
2010 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
In this work, the influence of weak magnetic field on structure-dependent
properties of micro-structured Si was determined. The researches of EPR-spectra
inherent to micro-structured Si showed the presence of the spectral line at H ~ 3500 Oe
that appears from centers with the g-factor g ~ 2.0010 (Pв – centers). Intensity of the
determined spectral line decreases twice after magnetic processing. The observed redox
processes and evolution of defect structure are interpreted as the influence of magnetic
field on micro-structured Si. Calculations made using the data of X-ray diffractometric
researches showed an essential decrease of internal strains and respective increase of the
lattice parameter in micro-structured Si samples after magnetic processing in the weak
magnetic field.
|
| isbn |
PACS 61.43.Dq, 61.72.Dd, 68.35.Dv, 76.30.Mi |
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/117805 |
| citation_txt |
Changes in the state of paramagnetic centers and lattice parameter of micro-structured Si under the influence of weak magnetic field / V.V. Trachevsky, L.P. Steblenko, P.Y. Demchenko, O.V. Koplak, A.M. Kuryliuk, A.K. Melnik // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 87-90. — Бібліогр.: 17 назв. — англ. |
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| first_indexed |
2025-11-27T16:50:23Z |
| last_indexed |
2025-11-27T16:50:23Z |
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