Changes in the state of paramagnetic centers and lattice parameter of micro-structured Si under the influence of weak magnetic field
In this work, the influence of weak magnetic field on structure-dependent
 properties of micro-structured Si was determined. The researches of EPR-spectra
 inherent to micro-structured Si showed the presence of the spectral line at H ~ 3500 Oe
 that appears from centers with...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2010 |
| Main Authors: | , , , , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/117805 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Changes in the state of paramagnetic centers and lattice parameter
 of micro-structured Si under the influence of weak magnetic field / V.V. Trachevsky, L.P. Steblenko, P.Y. Demchenko, O.V. Koplak, A.M. Kuryliuk, A.K. Melnik // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 87-90. — Бібліогр.: 17 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862597146961772544 |
|---|---|
| author | Trachevsky, V.V. Steblenko, L.P. Demchenko, P.Y. Koplak, O.V. Kuryliuk, A.M. Melnik, A.K. |
| author_facet | Trachevsky, V.V. Steblenko, L.P. Demchenko, P.Y. Koplak, O.V. Kuryliuk, A.M. Melnik, A.K. |
| citation_txt | Changes in the state of paramagnetic centers and lattice parameter
 of micro-structured Si under the influence of weak magnetic field / V.V. Trachevsky, L.P. Steblenko, P.Y. Demchenko, O.V. Koplak, A.M. Kuryliuk, A.K. Melnik // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 87-90. — Бібліогр.: 17 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | In this work, the influence of weak magnetic field on structure-dependent
properties of micro-structured Si was determined. The researches of EPR-spectra
inherent to micro-structured Si showed the presence of the spectral line at H ~ 3500 Oe
that appears from centers with the g-factor g ~ 2.0010 (Pв – centers). Intensity of the
determined spectral line decreases twice after magnetic processing. The observed redox
processes and evolution of defect structure are interpreted as the influence of magnetic
field on micro-structured Si. Calculations made using the data of X-ray diffractometric
researches showed an essential decrease of internal strains and respective increase of the
lattice parameter in micro-structured Si samples after magnetic processing in the weak
magnetic field.
|
| first_indexed | 2025-11-27T16:50:23Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-117805 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| isbn | PACS 61.43.Dq, 61.72.Dd, 68.35.Dv, 76.30.Mi |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-27T16:50:23Z |
| publishDate | 2010 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Trachevsky, V.V. Steblenko, L.P. Demchenko, P.Y. Koplak, O.V. Kuryliuk, A.M. Melnik, A.K. 2017-05-26T17:59:31Z 2017-05-26T17:59:31Z 2010 Changes in the state of paramagnetic centers and lattice parameter
 of micro-structured Si under the influence of weak magnetic field / V.V. Trachevsky, L.P. Steblenko, P.Y. Demchenko, O.V. Koplak, A.M. Kuryliuk, A.K. Melnik // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 87-90. — Бібліогр.: 17 назв. — англ. PACS 61.43.Dq, 61.72.Dd, 68.35.Dv, 76.30.Mi 1560-8034 https://nasplib.isofts.kiev.ua/handle/123456789/117805 In this work, the influence of weak magnetic field on structure-dependent
 properties of micro-structured Si was determined. The researches of EPR-spectra
 inherent to micro-structured Si showed the presence of the spectral line at H ~ 3500 Oe
 that appears from centers with the g-factor g ~ 2.0010 (Pв – centers). Intensity of the
 determined spectral line decreases twice after magnetic processing. The observed redox
 processes and evolution of defect structure are interpreted as the influence of magnetic
 field on micro-structured Si. Calculations made using the data of X-ray diffractometric
 researches showed an essential decrease of internal strains and respective increase of the
 lattice parameter in micro-structured Si samples after magnetic processing in the weak
 magnetic field. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Changes in the state of paramagnetic centers and lattice parameter of micro-structured Si under the influence of weak magnetic field Article published earlier |
| spellingShingle | Changes in the state of paramagnetic centers and lattice parameter of micro-structured Si under the influence of weak magnetic field Trachevsky, V.V. Steblenko, L.P. Demchenko, P.Y. Koplak, O.V. Kuryliuk, A.M. Melnik, A.K. |
| title | Changes in the state of paramagnetic centers and lattice parameter of micro-structured Si under the influence of weak magnetic field |
| title_full | Changes in the state of paramagnetic centers and lattice parameter of micro-structured Si under the influence of weak magnetic field |
| title_fullStr | Changes in the state of paramagnetic centers and lattice parameter of micro-structured Si under the influence of weak magnetic field |
| title_full_unstemmed | Changes in the state of paramagnetic centers and lattice parameter of micro-structured Si under the influence of weak magnetic field |
| title_short | Changes in the state of paramagnetic centers and lattice parameter of micro-structured Si under the influence of weak magnetic field |
| title_sort | changes in the state of paramagnetic centers and lattice parameter of micro-structured si under the influence of weak magnetic field |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/117805 |
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