Spin-dependent current in silicon p-n junction diodes
We have used electrically detected spin-dependent paramagnetic resonance to
 investigate the non-equilibrium conductivity in a silicon diode. In order to create
 paramagnetic centers, we used diode with a polished surface (that includes p-n junction).
 The dependence of relat...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 2010 |
| Автори: | , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/117808 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Spin-dependent current in silicon p-n junction diodes/O.V. Tretyak, O.I. Kozonushchenko, K.V. Krivokhizha, A.S. Revenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 95-97. — Бібліогр.: 10 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862560599286743040 |
|---|---|
| author | Tretyak, O.V. Kozonushchenko, O.I. Krivokhizha, K.V. Revenko, A.S. |
| author_facet | Tretyak, O.V. Kozonushchenko, O.I. Krivokhizha, K.V. Revenko, A.S. |
| citation_txt | Spin-dependent current in silicon p-n junction diodes/O.V. Tretyak, O.I. Kozonushchenko, K.V. Krivokhizha, A.S. Revenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 95-97. — Бібліогр.: 10 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | We have used electrically detected spin-dependent paramagnetic resonance to
investigate the non-equilibrium conductivity in a silicon diode. In order to create
paramagnetic centers, we used diode with a polished surface (that includes p-n junction).
The dependence of relative changes in the amplitude of a signal under resonance
conditions and the total value of current through the diode were investigated. We have
found the presence of inversion channel on the surface of p-n junction and proposed the
model of the influence of spin resonance on the channel conductivity. The upper value of
the time constant inherent to the spin-dependent process was determined as
approximately 10⁻⁶ s . The influence of the spin-dependent process on the charge state in
inversion channel has been discussed.
|
| first_indexed | 2025-11-25T23:07:36Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-117808 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-25T23:07:36Z |
| publishDate | 2010 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Tretyak, O.V. Kozonushchenko, O.I. Krivokhizha, K.V. Revenko, A.S. 2017-05-26T18:01:45Z 2017-05-26T18:01:45Z 2010 Spin-dependent current in silicon p-n junction diodes/O.V. Tretyak, O.I. Kozonushchenko, K.V. Krivokhizha, A.S. Revenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 95-97. — Бібліогр.: 10 назв. — англ. 1560-8034 PACS 73.20.-r, 73.40.-c, 85.30.Kk https://nasplib.isofts.kiev.ua/handle/123456789/117808 We have used electrically detected spin-dependent paramagnetic resonance to
 investigate the non-equilibrium conductivity in a silicon diode. In order to create
 paramagnetic centers, we used diode with a polished surface (that includes p-n junction).
 The dependence of relative changes in the amplitude of a signal under resonance
 conditions and the total value of current through the diode were investigated. We have
 found the presence of inversion channel on the surface of p-n junction and proposed the
 model of the influence of spin resonance on the channel conductivity. The upper value of
 the time constant inherent to the spin-dependent process was determined as
 approximately 10⁻⁶ s . The influence of the spin-dependent process on the charge state in
 inversion channel has been discussed. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Spin-dependent current in silicon p-n junction diodes Article published earlier |
| spellingShingle | Spin-dependent current in silicon p-n junction diodes Tretyak, O.V. Kozonushchenko, O.I. Krivokhizha, K.V. Revenko, A.S. |
| title | Spin-dependent current in silicon p-n junction diodes |
| title_full | Spin-dependent current in silicon p-n junction diodes |
| title_fullStr | Spin-dependent current in silicon p-n junction diodes |
| title_full_unstemmed | Spin-dependent current in silicon p-n junction diodes |
| title_short | Spin-dependent current in silicon p-n junction diodes |
| title_sort | spin-dependent current in silicon p-n junction diodes |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/117808 |
| work_keys_str_mv | AT tretyakov spindependentcurrentinsiliconpnjunctiondiodes AT kozonushchenkooi spindependentcurrentinsiliconpnjunctiondiodes AT krivokhizhakv spindependentcurrentinsiliconpnjunctiondiodes AT revenkoas spindependentcurrentinsiliconpnjunctiondiodes |