Mechanism of current flow and temperature dependence of contact resistivity in Au-Pd-Ti-Pd-n⁺ -GaN ohmic contacts
We present the results of structural and morphological investigations of interactions between phases in the layers of Au-Pd-Ti-Pd-n⁺-GaN contact metallization that appear at rapid thermal annealing (RTA). It is shown that formation of ohmic contact occurs in the course of RTA at Т = 900°C due to f...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2013 |
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| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2013
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| Zitieren: | Mechanism of current flow and temperature dependence of contact resistivity in Au-Pd-Ti-Pd-n⁺ -GaN ohmic contacts / A.V. Sachenko, A.E. Belyaev, N.S. Boltovets, L.M. Kapitanchuk, V.P. Klad’ko, R.V. Konakova, A.V. Kuchuk, T.V. Korostinskaya, A.S. Pilipchuk, V.N. Sheremet, Yu.I. Mazur, M.E. Ware, G.J. Salamo // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 4. — С. 313-321. — Бібліогр.: 32 назв. — англ. |
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Sachenko, A.V. Belyaev, A.E. Boltovets, N.S. Kapitanchuk, L.M. Klad’ko, V.P. Konakova, R.V. Kuchuk, A.V. Korostinskay, T.V. Pilipchuk, A.S. Sheremet, V.N. Mazur, Yu.I. Ware, M.E. Salamo, G.J. 2017-05-26T18:58:53Z 2017-05-26T18:58:53Z 2013 Mechanism of current flow and temperature dependence of contact resistivity in Au-Pd-Ti-Pd-n⁺ -GaN ohmic contacts / A.V. Sachenko, A.E. Belyaev, N.S. Boltovets, L.M. Kapitanchuk, V.P. Klad’ko, R.V. Konakova, A.V. Kuchuk, T.V. Korostinskaya, A.S. Pilipchuk, V.N. Sheremet, Yu.I. Mazur, M.E. Ware, G.J. Salamo // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 4. — С. 313-321. — Бібліогр.: 32 назв. — англ. 1560-8034 PACS 73.40.Cg, 73.40.Ns, 85.40.-e https://nasplib.isofts.kiev.ua/handle/123456789/117817 We present the results of structural and morphological investigations of interactions between phases in the layers of Au-Pd-Ti-Pd-n⁺-GaN contact metallization that appear at rapid thermal annealing (RTA). It is shown that formation of ohmic contact occurs in the course of RTA at Т = 900°C due to formation of titanium nitride. We studied experimentally and explained theoretically the temperature dependence of contact resistivity ρс(Т) of ohmic contacts in the 4.2-380 K temperature range. The ρс(Т) curve was shown to flatten out in the 4.2-50 K range. As temperature grew, ρс decreased exponentially. The results obtained enabled us to conclude that current flow has field nature at saturation of ρс(Т) and the thermofield nature in the exponential part of ρс(Т) curve. The Ukrainian coauthors had a support from the State Target Scientific and Technical Program of Ukraine “Nanotechnologies and nanomaterials” for 2010-2014. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Mechanism of current flow and temperature dependence of contact resistivity in Au-Pd-Ti-Pd-n⁺ -GaN ohmic contacts Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Mechanism of current flow and temperature dependence of contact resistivity in Au-Pd-Ti-Pd-n⁺ -GaN ohmic contacts |
| spellingShingle |
Mechanism of current flow and temperature dependence of contact resistivity in Au-Pd-Ti-Pd-n⁺ -GaN ohmic contacts Sachenko, A.V. Belyaev, A.E. Boltovets, N.S. Kapitanchuk, L.M. Klad’ko, V.P. Konakova, R.V. Kuchuk, A.V. Korostinskay, T.V. Pilipchuk, A.S. Sheremet, V.N. Mazur, Yu.I. Ware, M.E. Salamo, G.J. |
| title_short |
Mechanism of current flow and temperature dependence of contact resistivity in Au-Pd-Ti-Pd-n⁺ -GaN ohmic contacts |
| title_full |
Mechanism of current flow and temperature dependence of contact resistivity in Au-Pd-Ti-Pd-n⁺ -GaN ohmic contacts |
| title_fullStr |
Mechanism of current flow and temperature dependence of contact resistivity in Au-Pd-Ti-Pd-n⁺ -GaN ohmic contacts |
| title_full_unstemmed |
Mechanism of current flow and temperature dependence of contact resistivity in Au-Pd-Ti-Pd-n⁺ -GaN ohmic contacts |
| title_sort |
mechanism of current flow and temperature dependence of contact resistivity in au-pd-ti-pd-n⁺ -gan ohmic contacts |
| author |
Sachenko, A.V. Belyaev, A.E. Boltovets, N.S. Kapitanchuk, L.M. Klad’ko, V.P. Konakova, R.V. Kuchuk, A.V. Korostinskay, T.V. Pilipchuk, A.S. Sheremet, V.N. Mazur, Yu.I. Ware, M.E. Salamo, G.J. |
| author_facet |
Sachenko, A.V. Belyaev, A.E. Boltovets, N.S. Kapitanchuk, L.M. Klad’ko, V.P. Konakova, R.V. Kuchuk, A.V. Korostinskay, T.V. Pilipchuk, A.S. Sheremet, V.N. Mazur, Yu.I. Ware, M.E. Salamo, G.J. |
| publishDate |
2013 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
We present the results of structural and morphological investigations of
interactions between phases in the layers of Au-Pd-Ti-Pd-n⁺-GaN contact metallization that appear at rapid thermal annealing (RTA). It is shown that formation of ohmic contact
occurs in the course of RTA at Т = 900°C due to formation of titanium nitride. We
studied experimentally and explained theoretically the temperature dependence of
contact resistivity ρс(Т) of ohmic contacts in the 4.2-380 K temperature range. The ρс(Т)
curve was shown to flatten out in the 4.2-50 K range. As temperature grew, ρс decreased
exponentially. The results obtained enabled us to conclude that current flow has field
nature at saturation of ρс(Т) and the thermofield nature in the exponential part of ρс(Т)
curve.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/117817 |
| citation_txt |
Mechanism of current flow and temperature dependence of contact resistivity in Au-Pd-Ti-Pd-n⁺ -GaN ohmic contacts / A.V. Sachenko, A.E. Belyaev, N.S. Boltovets, L.M. Kapitanchuk, V.P. Klad’ko, R.V. Konakova, A.V. Kuchuk, T.V. Korostinskaya, A.S. Pilipchuk, V.N. Sheremet, Yu.I. Mazur, M.E. Ware, G.J. Salamo // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 4. — С. 313-321. — Бібліогр.: 32 назв. — англ. |
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| first_indexed |
2025-12-07T17:12:04Z |
| last_indexed |
2025-12-07T17:12:04Z |
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