Mechanism of current flow and temperature dependence of contact resistivity in Au-Pd-Ti-Pd-n⁺ -GaN ohmic contacts

We present the results of structural and morphological investigations of interactions between phases in the layers of Au-Pd-Ti-Pd-n⁺-GaN contact metallization that appear at rapid thermal annealing (RTA). It is shown that formation of ohmic contact occurs in the course of RTA at Т = 900°C due to f...

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2013
Hauptverfasser: Sachenko, A.V., Belyaev, A.E., Boltovets, N.S., Kapitanchuk, L.M., Klad’ko, V.P., Konakova, R.V., Kuchuk, A.V., Korostinskay, T.V., Pilipchuk, A.S., Sheremet, V.N., Mazur, Yu.I., Ware, M.E., Salamo, G.J.
Format: Artikel
Sprache:English
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2013
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/117817
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Zitieren:Mechanism of current flow and temperature dependence of contact resistivity in Au-Pd-Ti-Pd-n⁺ -GaN ohmic contacts / A.V. Sachenko, A.E. Belyaev, N.S. Boltovets, L.M. Kapitanchuk, V.P. Klad’ko, R.V. Konakova, A.V. Kuchuk, T.V. Korostinskaya, A.S. Pilipchuk, V.N. Sheremet, Yu.I. Mazur, M.E. Ware, G.J. Salamo // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 4. — С. 313-321. — Бібліогр.: 32 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-117817
record_format dspace
spelling Sachenko, A.V.
Belyaev, A.E.
Boltovets, N.S.
Kapitanchuk, L.M.
Klad’ko, V.P.
Konakova, R.V.
Kuchuk, A.V.
Korostinskay, T.V.
Pilipchuk, A.S.
Sheremet, V.N.
Mazur, Yu.I.
Ware, M.E.
Salamo, G.J.
2017-05-26T18:58:53Z
2017-05-26T18:58:53Z
2013
Mechanism of current flow and temperature dependence of contact resistivity in Au-Pd-Ti-Pd-n⁺ -GaN ohmic contacts / A.V. Sachenko, A.E. Belyaev, N.S. Boltovets, L.M. Kapitanchuk, V.P. Klad’ko, R.V. Konakova, A.V. Kuchuk, T.V. Korostinskaya, A.S. Pilipchuk, V.N. Sheremet, Yu.I. Mazur, M.E. Ware, G.J. Salamo // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 4. — С. 313-321. — Бібліогр.: 32 назв. — англ.
1560-8034
PACS 73.40.Cg, 73.40.Ns, 85.40.-e
https://nasplib.isofts.kiev.ua/handle/123456789/117817
We present the results of structural and morphological investigations of interactions between phases in the layers of Au-Pd-Ti-Pd-n⁺-GaN contact metallization that appear at rapid thermal annealing (RTA). It is shown that formation of ohmic contact occurs in the course of RTA at Т = 900°C due to formation of titanium nitride. We studied experimentally and explained theoretically the temperature dependence of contact resistivity ρс(Т) of ohmic contacts in the 4.2-380 K temperature range. The ρс(Т) curve was shown to flatten out in the 4.2-50 K range. As temperature grew, ρс decreased exponentially. The results obtained enabled us to conclude that current flow has field nature at saturation of ρс(Т) and the thermofield nature in the exponential part of ρс(Т) curve.
The Ukrainian coauthors had a support from the State Target Scientific and Technical Program of Ukraine “Nanotechnologies and nanomaterials” for 2010-2014.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Mechanism of current flow and temperature dependence of contact resistivity in Au-Pd-Ti-Pd-n⁺ -GaN ohmic contacts
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Mechanism of current flow and temperature dependence of contact resistivity in Au-Pd-Ti-Pd-n⁺ -GaN ohmic contacts
spellingShingle Mechanism of current flow and temperature dependence of contact resistivity in Au-Pd-Ti-Pd-n⁺ -GaN ohmic contacts
Sachenko, A.V.
Belyaev, A.E.
Boltovets, N.S.
Kapitanchuk, L.M.
Klad’ko, V.P.
Konakova, R.V.
Kuchuk, A.V.
Korostinskay, T.V.
Pilipchuk, A.S.
Sheremet, V.N.
Mazur, Yu.I.
Ware, M.E.
Salamo, G.J.
title_short Mechanism of current flow and temperature dependence of contact resistivity in Au-Pd-Ti-Pd-n⁺ -GaN ohmic contacts
title_full Mechanism of current flow and temperature dependence of contact resistivity in Au-Pd-Ti-Pd-n⁺ -GaN ohmic contacts
title_fullStr Mechanism of current flow and temperature dependence of contact resistivity in Au-Pd-Ti-Pd-n⁺ -GaN ohmic contacts
title_full_unstemmed Mechanism of current flow and temperature dependence of contact resistivity in Au-Pd-Ti-Pd-n⁺ -GaN ohmic contacts
title_sort mechanism of current flow and temperature dependence of contact resistivity in au-pd-ti-pd-n⁺ -gan ohmic contacts
author Sachenko, A.V.
Belyaev, A.E.
Boltovets, N.S.
Kapitanchuk, L.M.
Klad’ko, V.P.
Konakova, R.V.
Kuchuk, A.V.
Korostinskay, T.V.
Pilipchuk, A.S.
Sheremet, V.N.
Mazur, Yu.I.
Ware, M.E.
Salamo, G.J.
author_facet Sachenko, A.V.
Belyaev, A.E.
Boltovets, N.S.
Kapitanchuk, L.M.
Klad’ko, V.P.
Konakova, R.V.
Kuchuk, A.V.
Korostinskay, T.V.
Pilipchuk, A.S.
Sheremet, V.N.
Mazur, Yu.I.
Ware, M.E.
Salamo, G.J.
publishDate 2013
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description We present the results of structural and morphological investigations of interactions between phases in the layers of Au-Pd-Ti-Pd-n⁺-GaN contact metallization that appear at rapid thermal annealing (RTA). It is shown that formation of ohmic contact occurs in the course of RTA at Т = 900°C due to formation of titanium nitride. We studied experimentally and explained theoretically the temperature dependence of contact resistivity ρс(Т) of ohmic contacts in the 4.2-380 K temperature range. The ρс(Т) curve was shown to flatten out in the 4.2-50 K range. As temperature grew, ρс decreased exponentially. The results obtained enabled us to conclude that current flow has field nature at saturation of ρс(Т) and the thermofield nature in the exponential part of ρс(Т) curve.
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/117817
citation_txt Mechanism of current flow and temperature dependence of contact resistivity in Au-Pd-Ti-Pd-n⁺ -GaN ohmic contacts / A.V. Sachenko, A.E. Belyaev, N.S. Boltovets, L.M. Kapitanchuk, V.P. Klad’ko, R.V. Konakova, A.V. Kuchuk, T.V. Korostinskaya, A.S. Pilipchuk, V.N. Sheremet, Yu.I. Mazur, M.E. Ware, G.J. Salamo // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 4. — С. 313-321. — Бібліогр.: 32 назв. — англ.
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first_indexed 2025-12-07T17:12:04Z
last_indexed 2025-12-07T17:12:04Z
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